FDP16AN08A0 MOSFET PDF: N-Ch, 75V, 58A. Full specification with pinout and replacement list

FDP16AN08A0 PDF Specs and Replacement

   Type Designator: FDP16AN08A0
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 135 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 58 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TO220

FDP16AN08A0 substitution

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FDP16AN08A0 PDF Specs

..1. Size:267K fairchild semi
fdp16an08a0 fdb16an08a0.pdf pdf_icon

July 2002 FDP16AN08A0 / FDB16AN08A0 N-Channel PowerTrench MOSFET 75V, 58A, 16m Features Applications rDS(ON) = 13m (Typ.), VGS = 10V, ID = 58A 42V Automotive Load Control Qg(tot) = 28nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode Electronic Valve Train Systems UIS Capab... See More ⇒

..2. Size:627K onsemi
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

..3. Size:284K inchange semiconductor
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9.1. Size:241K fairchild semi
fdp16n50u fdpf16n50ut.pdf pdf_icon

October 2009 UniFETTM FDP16N50U / FDPF16N50UT tm N-Channel MOSFET, FRFET 500V, 15A, 0.48 Features Description RDS(on) = 0.37 ( Typ.)@ VGS = 10V, ID = 7.5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( Typ. 32nC) DMOS technology. Low Crss ( Typ. 20pF) This advance tech... See More ⇒