Справочник MOSFET. IRFP250N

 

IRFP250N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRFP250N

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 214 W

Предельно допустимое напряжение сток-исток (Uds): 200 V

Предельно допустимое напряжение затвор-исток (Ugs): 20 V

Максимально допустимый постоянный ток стока (Id): 30 A

Общий заряд затвора (Qg): 123 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.075 Ohm

Тип корпуса: TO247AC

Аналог (замена) для IRFP250N

 

 

IRFP250N Datasheet (PDF)

1.1. irfp250npbf.pdf Size:180K _upd-mosfet

IRFP250N
IRFP250N

PD - 95007A IRFP250NPbF HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D VDSS = 200V l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 0.075Ω G l Ease of Paralleling l Simple Drive Requirements ID = 30A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni

1.2. irfp250n.pdf Size:122K _international_rectifier

IRFP250N
IRFP250N

PD - 94008 IRFP250N HEXFET Power MOSFET Advanced Process Technology D VDSS = 200V Dynamic dv/dt Rating 175C Operating Temperature Fast Switching RDS(on) = 0.075? G Fully Avalanche Rated Ease of Paralleling ID = 30A S Simple Drive Requirements Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

 3.1. irfp250pbf.pdf Size:3344K _upd-mosfet

IRFP250N
IRFP250N

PD - 95008 IRFP250PbF • Lead-Free www.irf.com 1 2/11/04 IRFP250PbF 2 www.irf.com IRFP250PbF www.irf.com 3 IRFP250PbF 4 www.irf.com IRFP250PbF www.irf.com 5 IRFP250PbF 6 www.irf.com IRFP250PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D B M 2.

3.2. irfp250r irfp252r.pdf Size:188K _upd-mosfet

IRFP250N
IRFP250N



 3.3. irfp250mpbf.pdf Size:636K _upd-mosfet

IRFP250N
IRFP250N

PD - 96292 IRFP250MPbF HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D VDSS = 200V l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 0.075Ω G l Ease of Paralleling l Simple Drive Requirements ID = 30A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniq

3.4. irfp250.pdf Size:271K _st

IRFP250N
IRFP250N

IRFP250 N-CHANNEL 200V - 0.073? - 33A TO-247 PowerMeshII MOSFET TYPE VDSS RDS(on) ID IRFP250 200V < 0.085? 33 A TYPICAL RDS(on) = 0.073? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK 3 GATE CHARGE MINIMIZED 2 1 DESCRIPTION TO-247 The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout re- finements introduced

 3.5. irfp250-253.pdf Size:501K _international_rectifier

IRFP250N
IRFP250N



3.6. irfp250pbf.pdf Size:1992K _international_rectifier

IRFP250N
IRFP250N

PD - 95008 IRFP250PbF Lead-Free 2/11/04 Document Number: 91212 www.vishay.com 1 IRFP250PbF Document Number: 91212 www.vishay.com 2 IRFP250PbF Document Number: 91212 www.vishay.com 3 IRFP250PbF Document Number: 91212 www.vishay.com 4 IRFP250PbF Document Number: 91212 www.vishay.com 5 IRFP250PbF Document Number: 91212 www.vishay.com 6 IRFP250PbF TO-247AC Package Outline

3.7. irfp250.pdf Size:164K _international_rectifier

IRFP250N
IRFP250N

3.8. irfp250a.pdf Size:926K _samsung

IRFP250N
IRFP250N

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.085 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 32 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.071 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

3.9. irfp250 sihfp250.pdf Size:1453K _vishay

IRFP250N
IRFP250N

IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Repetitive Avalanche Rated Available RDS(on) (?)VGS = 10 V 0.085 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 140 COMPLIANT Fast Switching Qgs (nC) 28 Ease of Paralleling Qgd (nC) 74 Simple Drive Requirements Configuration Single Compliant to RoHS Direct

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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