IRFP250N Todos los transistores

 

IRFP250N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP250N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 214 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 30 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 123 nC

Resistencia drenaje-fuente RDS(on): 0.075 Ohm

Empaquetado / Estuche: TO247AC

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IRFP250N Datasheet (PDF)

1.1. irfp250npbf.pdf Size:180K _international_rectifier

IRFP250N
IRFP250N

PD - 95007A IRFP250NPbF HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D VDSS = 200V l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 0.075Ω G l Ease of Paralleling l Simple Drive Requirements ID = 30A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni

1.2. irfp250n.pdf Size:122K _international_rectifier

IRFP250N
IRFP250N

PD - 94008 IRFP250N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 200V Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching RDS(on) = 0.075Ω G Fully Avalanche Rated Ease of Paralleling ID = 30A S Simple Drive Requirements Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme

 3.1. irfp250.pdf Size:271K _st

IRFP250N
IRFP250N

IRFP250 N-CHANNEL 200V - 0.073Ω - 33A TO-247 PowerMesh™II MOSFET TYPE VDSS RDS(on) ID IRFP250 200V < 0.085Ω 33 A TYPICAL RDS(on) = 0.073Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK 3 GATE CHARGE MINIMIZED 2 1 DESCRIPTION TO-247 The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re- fineme

3.2. irfp250-253.pdf Size:501K _international_rectifier

IRFP250N
IRFP250N



 3.3. irfp250pbf.pdf Size:3344K _international_rectifier

IRFP250N
IRFP250N

PD - 95008 IRFP250PbF • Lead-Free www.irf.com 1 2/11/04 IRFP250PbF 2 www.irf.com IRFP250PbF www.irf.com 3 IRFP250PbF 4 www.irf.com IRFP250PbF www.irf.com 5 IRFP250PbF 6 www.irf.com IRFP250PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D B M 2.

3.4. irfp250.pdf Size:164K _international_rectifier

IRFP250N
IRFP250N



 3.5. irfp250mpbf.pdf Size:636K _international_rectifier

IRFP250N
IRFP250N

PD - 96292 IRFP250MPbF HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D VDSS = 200V l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 0.075Ω G l Ease of Paralleling l Simple Drive Requirements ID = 30A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniq

3.6. irfp250a.pdf Size:926K _samsung

IRFP250N
IRFP250N

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.085 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 32 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.071 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val

3.7. irfp250 sihfp250.pdf Size:1453K _vishay

IRFP250N
IRFP250N

IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 200 • Repetitive Avalanche Rated Available RDS(on) (Ω)VGS = 10 V 0.085 • Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 140 COMPLIANT • Fast Switching Qgs (nC) 28 • Ease of Paralleling Qgd (nC) 74 • Simple Drive Requirements Configuration Single • Compli

3.8. irfp250r irfp252r.pdf Size:188K _harris_semi

IRFP250N
IRFP250N



Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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