IRFP250N Todos los transistores

 

IRFP250N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP250N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 214 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 30 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 123 nC

Resistencia drenaje-fuente RDS(on): 0.075 Ohm

Empaquetado / Estuche: TO247AC

Búsqueda de reemplazo de MOSFET IRFP250N

 

IRFP250N Datasheet (PDF)

1.1. irfp250npbf.pdf Size:180K _upd-mosfet

IRFP250N
IRFP250N

PD - 95007A IRFP250NPbF HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D VDSS = 200V l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 0.075Ω G l Ease of Paralleling l Simple Drive Requirements ID = 30A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni

1.2. irfp250npbf.pdf Size:180K _international_rectifier

IRFP250N
IRFP250N

PD - 95007A IRFP250NPbF HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D VDSS = 200V l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 0.075Ω G l Ease of Paralleling l Simple Drive Requirements ID = 30A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni

 1.3. irfp250n.pdf Size:122K _international_rectifier

IRFP250N
IRFP250N

PD - 94008 IRFP250N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 200V Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching RDS(on) = 0.075Ω G Fully Avalanche Rated Ease of Paralleling ID = 30A S Simple Drive Requirements Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme

1.4. irfp250npbf.pdf Size:260K _inchange_semiconductor

IRFP250N
IRFP250N

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP250NPBF ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

 1.5. irfp250n.pdf Size:241K _inchange_semiconductor

IRFP250N
IRFP250N

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP250N,IIRFP250N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤75mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

Otros transistores... IRFL014N , IRFL024Z , IRFL4315 , IRFML8244 , IRFP1405 , IRFP150M , IRFP150V , IRFP250M , 2SK1058 , IRFP260M , IRFP260N , IRFP2907 , IRFP2907Z , IRFP3077 , IRFP3206 , IRFP3306 , IRFP3415 .

 

 
Back to Top