All MOSFET. IRFP250N Datasheet

 

IRFP250N MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFP250N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 214 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 30 A

Total Gate Charge (Qg): 123 nC

Maximum Drain-Source On-State Resistance (Rds): 0.075 Ohm

Package: TO247AC

IRFP250N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFP250N Datasheet (PDF)

1.1. irfp250npbf.pdf Size:180K _upd-mosfet

IRFP250N
IRFP250N

PD - 95007A IRFP250NPbF HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D VDSS = 200V l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 0.075Ω G l Ease of Paralleling l Simple Drive Requirements ID = 30A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni

1.2. irfp250n.pdf Size:122K _international_rectifier

IRFP250N
IRFP250N

PD - 94008 IRFP250N HEXFET Power MOSFET Advanced Process Technology D VDSS = 200V Dynamic dv/dt Rating 175C Operating Temperature Fast Switching RDS(on) = 0.075? G Fully Avalanche Rated Ease of Paralleling ID = 30A S Simple Drive Requirements Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

 1.3. irfp250npbf.pdf Size:260K _inchange_semiconductor

IRFP250N
IRFP250N

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP250NPBF ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

1.4. irfp250n.pdf Size:241K _inchange_semiconductor

IRFP250N
IRFP250N

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP250N,IIRFP250N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤75mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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