All MOSFET. IRFP250N Datasheet

 

IRFP250N MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFP250N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 214 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 30 A

Maximum Drain-Source On-State Resistance (Rds): 0.075 Ohm

Package: TO247AC

IRFP250N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRFP250N Datasheet (PDF)

1.1. irfp250n.pdf Size:122K _international_rectifier

IRFP250N
IRFP250N

PD - 94008 IRFP250N HEXFET® Power MOSFET Advanced Process Technology D VDSS = 200V Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching RDS(on) = 0.075? G Fully Avalanche Rated Ease of Paralleling ID = 30A S Simple Drive Requirements Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

3.1. irfp250.pdf Size:271K _st

IRFP250N
IRFP250N

IRFP250 N-CHANNEL 200V - 0.073? - 33A TO-247 PowerMesh™II MOSFET TYPE VDSS RDS(on) ID IRFP250 200V < 0.085? 33 A TYPICAL RDS(on) = 0.073? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK 3 GATE CHARGE MINIMIZED 2 1 DESCRIPTION TO-247 The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re- finements introduced

3.2. irfp250.pdf Size:164K _international_rectifier

IRFP250N
IRFP250N

3.3. irfp250-253.pdf Size:501K _international_rectifier

IRFP250N
IRFP250N



3.4. irfp250pbf.pdf Size:1992K _international_rectifier

IRFP250N
IRFP250N

PD - 95008 IRFP250PbF • Lead-Free 2/11/04 Document Number: 91212 www.vishay.com 1 IRFP250PbF Document Number: 91212 www.vishay.com 2 IRFP250PbF Document Number: 91212 www.vishay.com 3 IRFP250PbF Document Number: 91212 www.vishay.com 4 IRFP250PbF Document Number: 91212 www.vishay.com 5 IRFP250PbF Document Number: 91212 www.vishay.com 6 IRFP250PbF TO-247AC Package Outline

3.5. irfp250a.pdf Size:926K _samsung

IRFP250N
IRFP250N

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.085 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 32 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.071 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

3.6. irfp250_sihfp250.pdf Size:1453K _vishay

IRFP250N
IRFP250N

IRFP250, SiHFP250 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 200 • Repetitive Avalanche Rated Available RDS(on) (?)VGS = 10 V 0.085 • Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 140 COMPLIANT • Fast Switching Qgs (nC) 28 • Ease of Paralleling Qgd (nC) 74 • Simple Drive Requirements Configuration Single • Compliant to RoHS Direct

Datasheet: IRFL014N , IRFL024Z , IRFL4315 , IRFML8244 , IRFP1405 , IRFP150M , IRFP150V , IRFP250M , 2SK1058 , IRFP260M , IRFP260N , IRFP2907 , IRFP2907Z , IRFP3077 , IRFP3206 , IRFP3306 , IRFP3415 .

 


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