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IRFP250N Specs and Replacement

The IRFP250N is an N-channel power MOSFET designed for high-current and high-voltage applications. It features a drain-source voltage rating of 200V and a continuous drain current up to 30A, making it suitable for switching power supplies, motor drivers, audio amplifiers. Its low Rds(on) (around 0.075 Ω) reduces conduction losses, improving overall efficiency. Its TO247 package ensures effective heat dissipation, allowing reliable operation under demanding load conditions.


   Type Designator: IRFP250N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 43 nS
   Cossⓘ - Output Capacitance: 315 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: TO247AC
 

 IRFP250N substitution

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IRFP250N Specs

 ..1. Size:180K  international rectifier
 irfp250npbf.pdf pdf_icon

IRFP250N

PD - 95007A IRFP250NPbF HEXFET Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D VDSS = 200V l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated RDS(on) = 0.075 G l Ease of Paralleling l Simple Drive Requirements ID = 30A l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni... See More ⇒

 ..2. Size:122K  international rectifier
 irfp250n.pdf pdf_icon

IRFP250N

PD - 94008 IRFP250N HEXFET Power MOSFET Advanced Process Technology D VDSS = 200V Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching RDS(on) = 0.075 G Fully Avalanche Rated Ease of Paralleling ID = 30A S Simple Drive Requirements Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extreme... See More ⇒

 ..3. Size:596K  cn minos
 irfp250n.pdf pdf_icon

IRFP250N

200V N-Channel MOSFET Description IRFP250N, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications Schematic diagram FEATURES Proprietary New Planar Technology ... See More ⇒

 ..4. Size:260K  inchange semiconductor
 irfp250npbf.pdf pdf_icon

IRFP250N

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP250NPBF FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source... See More ⇒

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Detailed specifications: IRFL014N , IRFL024Z , IRFL4315 , IRFML8244 , IRFP1405 , IRFP150M , IRFP150V , IRFP250M , IRFP064N , IRFP260M , IRFP260N , IRFP2907 , IRFP2907Z , IRFP3077 , IRFP3206 , IRFP3306 , IRFP3415 .

Keywords - IRFP250N MOSFET specs

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