Справочник MOSFET. FDP2614

 

FDP2614 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDP2614
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 260 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 62 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.027 Ohm
   Тип корпуса: TO220
     - подбор MOSFET транзистора по параметрам

 

FDP2614 Datasheet (PDF)

 ..1. Size:353K  fairchild semi
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FDP2614

November 2007tmFDP2614200V N-Channel PowerTrench MOSFETGeneral Description DescriptionThis N-Channel MOSFET is produced using Fairchild Semicon- 62A, 200V, RDS(on) = 22.9m @VGS = 10 Vductors advanced PowerTrench process that has been espe- Fast switching speedcially tailored to minimize the on-state resistance and yet Low gate chargemaintain superior switching p

 ..2. Size:1106K  onsemi
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FDP2614

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:283K  inchange semiconductor
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FDP2614

isc N-Channel MOSFET Transistor FDP2614FEATURESWith TO-220 packagingDrain Source Voltage-: V 200VDSSStatic drain-source on-resistance:RDS(on) 27m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 9.1. Size:79K  fairchild semi
fdp2670.pdfpdf_icon

FDP2614

November 2001FDP2670/FDB2670200V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 19 A, 200 V. RDS(ON) = 130 m @ VGS = 10 Vspecifically for switching on the primary side in theisolated DC/DC converter application. Any application Low gate charge (27 nC typical)requiring a 200V MOSFETs with low on-resista

Другие MOSFET... FDP20N50 , FDP20N50F , FDP22N50N , FDP24N40 , STM4435 , FDP2532 , FDP2552 , FDP2572 , K3569 , STM4433A , FDP26N40 , STM4432 , FDP2710 , FDP2710F085 , FDP33N25 , FDP3651U , STM4410A .

History: ZXMS6005DT8 | UPA2709GR | RJL5014DPP | PJS6405 | AP9970GK-HF | MTM4N45 | WSD4062DN56

 

 
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