FDP2614 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDP2614
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 260 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 62 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 76 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.027 Ohm
   Paquete / Cubierta: TO220

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FDP2614 Datasheet (PDF)

..1. Size:353K fairchild semi
fdp2614.pdf

November 2007tmFDP2614200V N-Channel PowerTrench MOSFETGeneral Description DescriptionThis N-Channel MOSFET is produced using Fairchild Semicon- 62A, 200V, RDS(on) = 22.9m @VGS = 10 Vductors advanced PowerTrench process that has been espe- Fast switching speedcially tailored to minimize the on-state resistance and yet Low gate chargemaintain superior switching p

..2. Size:1106K onsemi
fdp2614.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

..3. Size:283K inchange semiconductor
fdp2614.pdf

isc N-Channel MOSFET Transistor FDP2614FEATURESWith TO-220 packagingDrain Source Voltage-: V 200VDSSStatic drain-source on-resistance:RDS(on) 27m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

9.1. Size:79K fairchild semi
fdp2670.pdf

November 2001FDP2670/FDB2670200V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 19 A, 200 V. RDS(ON) = 130 m @ VGS = 10 Vspecifically for switching on the primary side in theisolated DC/DC converter application. Any application Low gate charge (27 nC typical)requiring a 200V MOSFETs with low on-resista

9.2. Size:567K fairchild semi
fdp26n40 fdpf26n40.pdf

February 2008UniFETTMFDP26N40 / FDPF26N40tmN-Channel MOSFET 400V, 26A, 0.16Features Description RDS(on) = 0.13 ( Typ.)@ VGS = 10V, ID = 13A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 48nC)stripe, DMOS technology. Low Crss ( Typ. 30pF)This advanced technology h

9.3. Size:259K inchange semiconductor
fdp26n40.pdf

isc N-Channel MOSFET Transistor FDP26N40FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

Otros transistores... FDP20N50 , FDP20N50F , FDP22N50N , FDP24N40 , STM4435 , FDP2532 , FDP2552 , FDP2572 , IRF9540 , STM4433A , FDP26N40 , STM4432 , FDP2710 , FDP2710F085 , FDP33N25 , FDP3651U , STM4410A .

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