Аналоги JMTG060P03A. Основные параметры
Наименование производителя: JMTG060P03A
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 104
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 111
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 10
ns
Cossⓘ - Выходная емкость: 687
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0054
Ohm
Тип корпуса:
PDFN5X6-8L
Аналог (замена) для JMTG060P03A
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подбор ⓘ MOSFET транзистора по параметрам
JMTG060P03A даташит
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History: DH029N08
| DH100P28B
| AOT20C60
| JMTG062N04D
| JMSL1006PGQ
| JMSL1008AC
| JMTG100N04A
