Справочник MOSFET. FDP2532

 

FDP2532 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDP2532
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 310 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 79 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.016 Ohm
   Тип корпуса: TO220
     - подбор MOSFET транзистора по параметрам

 

FDP2532 Datasheet (PDF)

 ..1. Size:275K  fairchild semi
fdb2532 fdp2532 fdi2532.pdfpdf_icon

FDP2532

August 2002FDB2532 / FDP2532 / FDI2532N-Channel PowerTrench MOSFET150V, 79A, 16mFeatures Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 33A DC/DC converters and Off-Line UPS Qg(tot) = 82nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage S

 ..2. Size:1144K  onsemi
fdp2532 fdb2532.pdfpdf_icon

FDP2532

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:263K  inchange semiconductor
fdp2532.pdfpdf_icon

FDP2532

isc N-Channel MOSFET Transistor FDP2532FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

 9.1. Size:77K  fairchild semi
fdp2570.pdfpdf_icon

FDP2532

August 2001FDP2570/FDB2570150V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 22 A, 150 V. RDS(ON) = 80 m @ VGS = 10 Vspecifically for switching on the primary side in theRDS(ON) = 90 m @ VGS = 6 Visolated DC/DC converter application. Any applicationrequiring a 150V MOSFETs with low on-resistance and

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History: BSP130 | FDC654P | OSG55R074HSZF | IXFX30N110P | 2SK1501 | IXTP160N04T2 | PNMET20V06E

 

 
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