All MOSFET. FDP2532 Datasheet

 

FDP2532 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDP2532

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 310 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 79 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 82 nC

Maximum Drain-Source On-State Resistance (Rds): 0.016 Ohm

Package: TO220

FDP2532 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDP2532 Datasheet (PDF)

0.1. fdb2532 fdp2532 fdi2532.pdf Size:275K _fairchild_semi

FDP2532
FDP2532

August 2002FDB2532 / FDP2532 / FDI2532N-Channel PowerTrench MOSFET150V, 79A, 16mFeatures Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 33A DC/DC converters and Off-Line UPS Qg(tot) = 82nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage S

0.2. fdp2532.pdf Size:263K _inchange_semiconductor

FDP2532
FDP2532

isc N-Channel MOSFET Transistor FDP2532FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

 9.1. fdb2552 fdp2552.pdf Size:256K _fairchild_semi

FDP2532
FDP2532

October 2002FDB2552 / FDP2552N-Channel PowerTrench MOSFET150V, 37A, 36mFeatures Applications rDS(ON) = 32m (Typ.), VGS = 10V, ID = 16A DC/DC Converters and Off-line UPS Qg(tot) = 39nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous R

9.2. fdb2572 fdp2572.pdf Size:269K _fairchild_semi

FDP2532
FDP2532

September 2002FDB2572 / FDP2572N-Channel PowerTrench MOSFET150V, 29A, 54mFeatures Applications rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A DC/DC converters and Off-Line UPS Qg(tot) = 26nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchrono

 9.3. fdp2570.pdf Size:77K _fairchild_semi

FDP2532
FDP2532

August 2001FDP2570/FDB2570150V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 22 A, 150 V. RDS(ON) = 80 m @ VGS = 10 Vspecifically for switching on the primary side in theRDS(ON) = 90 m @ VGS = 6 Visolated DC/DC converter application. Any applicationrequiring a 150V MOSFETs with low on-resistance and

9.4. fdp2572.pdf Size:283K _inchange_semiconductor

FDP2532
FDP2532

isc N-Channel MOSFET Transistor FDP2572FEATURESWith TO-220 packagingDrain Source Voltage-: V 150VDSSStatic drain-source on-resistance:RDS(on) 54m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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