FDP19N40 - аналоги, параметры транзистора - Справочник транзисторов

FDP19N40 даташит

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October UniFETTM FDP19N40 / FDPF19N40 tm N-Channel MOSFET 400V, 19A, 0.24 Features Description RDS(on) =0.2 ( Typ.)@ VGS = 10V, ID = 9.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low Gate Charge ( Typ. 32nC) stripe, DMOS technology. Low Crss ( Typ. 20pF) This advanced technology has been

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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isc N-Channel MOSFET Transistor FDP19N40 FEATURES Drain Current I = 19A@ T =25 D C Drain Source Voltage V = 240V(Min) DSS Static Drain-Source On-Resistance R = 240m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A

Другие MOSFET... FDP150N10AF102 , STM4460 , FDP15N40 , STM4446 , FDP16AN08A0 , FDP18N20F , STM4439A , FDP18N50 , IRF3710 , STM4437A , FDP20N50 , FDP20N50F , FDP22N50N , FDP24N40 , STM4435 , FDP2532 , FDP2552 .