FDP2552 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDP2552

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 37 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm

Encapsulados: TO220

 Búsqueda de reemplazo de FDP2552 MOSFET

- Selecciónⓘ de transistores por parámetros

 

FDP2552 datasheet

 ..1. Size:256K  fairchild semi
fdb2552 fdp2552.pdf pdf_icon

FDP2552

October 2002 FDB2552 / FDP2552 N-Channel PowerTrench MOSFET 150V, 37A, 36m Features Applications rDS(ON) = 32m (Typ.), VGS = 10V, ID = 16A DC/DC Converters and Off-line UPS Qg(tot) = 39nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous R

 9.1. Size:77K  fairchild semi
fdp2570.pdf pdf_icon

FDP2552

August 2001 FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 22 A, 150 V. RDS(ON) = 80 m @ VGS = 10 V specifically for switching on the primary side in the RDS(ON) = 90 m @ VGS = 6 V isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and

 9.2. Size:269K  fairchild semi
fdb2572 fdp2572.pdf pdf_icon

FDP2552

September 2002 FDB2572 / FDP2572 N-Channel PowerTrench MOSFET 150V, 29A, 54m Features Applications rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A DC/DC converters and Off-Line UPS Qg(tot) = 26nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchrono

 9.3. Size:275K  fairchild semi
fdb2532 fdp2532 fdi2532.pdf pdf_icon

FDP2552

August 2002 FDB2532 / FDP2532 / FDI2532 N-Channel PowerTrench MOSFET 150V, 79A, 16m Features Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 33A DC/DC converters and Off-Line UPS Qg(tot) = 82nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage S

Otros transistores... FDP19N40, STM4437A, FDP20N50, FDP20N50F, FDP22N50N, FDP24N40, STM4435, FDP2532, IRFP250N, FDP2572, FDP2614, STM4433A, FDP26N40, STM4432, FDP2710, FDP2710F085, FDP33N25