SVT3025D4 Todos los transistores

 

SVT3025D4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SVT3025D4
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 19 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 23 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 47 nS
   Cossⓘ - Capacitancia de salida: 67 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
   Paquete / Cubierta: TO252-4L
 

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SVT3025D4 Datasheet (PDF)

 ..1. Size:547K  silan
 svt3025d4.pdf pdf_icon

SVT3025D4

SVT3025D4 30V N+P 33SVT3025D4 N+P MOS LVMOS 25

 9.1. Size:172K  onsemi
 nst30010mxv6t1g nsvt30010mxv6t1g.pdf pdf_icon

SVT3025D4

NST30010MXV6T1G,NSVT30010MXV6T1GDual Matched GeneralPurpose TransistorPNP Matched Pairhttp://onsemi.comThese transistors are housed in an ultra-small SOT563 packageideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense a

 9.2. Size:102K  onsemi
 nsvt30010mxv6t1g.pdf pdf_icon

SVT3025D4

NST30010MXV6T1G,NSVT30010MXV6T1GDual Matched GeneralPurpose TransistorPNP Matched Pairhttp://onsemi.comThese transistors are housed in an ultra-small SOT563 packageideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense a

Otros transistores... SVT10111ND , SVT10500PD , SVT1104SA , SVT20240NP7 , SVT20240NS , SVT20240NT , SVT25600NF , SVT25600NT , 7N60 , SVT4607SA , SVTP035R5NL3 , SVTP209R7NP7 , EMB07N03HR , EMF90P02A , FQP12N65C , FQPF12N65C , HY3408AP .

History: WFJ5N65B | SML30B48 | FQPF12N65C

 

 
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