SVT3025D4 Todos los transistores

 

SVT3025D4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SVT3025D4

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 19 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 23 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 47 nS

Cossⓘ - Capacitancia de salida: 67 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm

Encapsulados: TO252-4L

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SVT3025D4 datasheet

 ..1. Size:547K  silan
 svt3025d4.pdf pdf_icon

SVT3025D4

 9.1. Size:172K  onsemi
 nst30010mxv6t1g nsvt30010mxv6t1g.pdf pdf_icon

SVT3025D4

NST30010MXV6T1G, NSVT30010MXV6T1G Dual Matched General Purpose Transistor PNP Matched Pair http //onsemi.com These transistors are housed in an ultra-small SOT563 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Applications are Current Mirrors; Differential, Sense a

 9.2. Size:102K  onsemi
 nsvt30010mxv6t1g.pdf pdf_icon

SVT3025D4

NST30010MXV6T1G, NSVT30010MXV6T1G Dual Matched General Purpose Transistor PNP Matched Pair http //onsemi.com These transistors are housed in an ultra-small SOT563 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Applications are Current Mirrors; Differential, Sense a

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History: WMM023N08HGS | RCJ120N20 | AP10TN135M

 

 

 

 

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