SVT3025D4 Datasheet and Replacement
Type Designator: SVT3025D4
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 19 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 47 nS
Cossⓘ - Output Capacitance: 67 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO252-4L
SVT3025D4 substitution
SVT3025D4 Datasheet (PDF)
nst30010mxv6t1g nsvt30010mxv6t1g.pdf

NST30010MXV6T1G,NSVT30010MXV6T1GDual Matched GeneralPurpose TransistorPNP Matched Pairhttp://onsemi.comThese transistors are housed in an ultra-small SOT563 packageideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense a
nsvt30010mxv6t1g.pdf

NST30010MXV6T1G,NSVT30010MXV6T1GDual Matched GeneralPurpose TransistorPNP Matched Pairhttp://onsemi.comThese transistors are housed in an ultra-small SOT563 packageideally suited for portable products. They are assembled to create apair of devices highly matched in all parameters, eliminating the needfor costly trimming. Applications are Current Mirrors; Differential,Sense a
Datasheet: SVT10111ND , SVT10500PD , SVT1104SA , SVT20240NP7 , SVT20240NS , SVT20240NT , SVT25600NF , SVT25600NT , MMIS60R580P , SVT4607SA , SVTP035R5NL3 , SVTP209R7NP7 , EMB07N03HR , EMF90P02A , FQP12N65C , FQPF12N65C , HY3408AP .
History: STH310N10F7-6 | NCEP10N85AG | IRF5803 | WMP15N65C2 | SI4966DY | HCD65R2K2 | CPC3701C
Keywords - SVT3025D4 MOSFET datasheet
SVT3025D4 cross reference
SVT3025D4 equivalent finder
SVT3025D4 lookup
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SVT3025D4 replacement
History: STH310N10F7-6 | NCEP10N85AG | IRF5803 | WMP15N65C2 | SI4966DY | HCD65R2K2 | CPC3701C



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