SVT3025D4 Specs and Replacement
Type Designator: SVT3025D4
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 19 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 23 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 47 nS
Cossⓘ - Output Capacitance: 67 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO252-4L
SVT3025D4 substitution
- MOSFET ⓘ Cross-Reference Search
SVT3025D4 datasheet
nst30010mxv6t1g nsvt30010mxv6t1g.pdf
NST30010MXV6T1G, NSVT30010MXV6T1G Dual Matched General Purpose Transistor PNP Matched Pair http //onsemi.com These transistors are housed in an ultra-small SOT563 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Applications are Current Mirrors; Differential, Sense a... See More ⇒
nsvt30010mxv6t1g.pdf
NST30010MXV6T1G, NSVT30010MXV6T1G Dual Matched General Purpose Transistor PNP Matched Pair http //onsemi.com These transistors are housed in an ultra-small SOT563 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Applications are Current Mirrors; Differential, Sense a... See More ⇒
Detailed specifications: SVT10111ND, SVT10500PD, SVT1104SA, SVT20240NP7, SVT20240NS, SVT20240NT, SVT25600NF, SVT25600NT, 7N60, SVT4607SA, SVTP035R5NL3, SVTP209R7NP7, EMB07N03HR, EMF90P02A, FQP12N65C, FQPF12N65C, HY3408AP
Keywords - SVT3025D4 MOSFET specs
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History: STF13NM60ND
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