RU75N08R Todos los transistores

 

RU75N08R MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RU75N08R

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 176 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 450 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm

Encapsulados: TO220

 Búsqueda de reemplazo de RU75N08R MOSFET

- Selecciónⓘ de transistores por parámetros

 

RU75N08R datasheet

 ..1. Size:297K  1
 ru75n08r.pdf pdf_icon

RU75N08R

RU75N08R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 75V/80A, RDS (ON) =8m (Typ.) @VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested 175 C Operating Temperature Lead Free and Green Available Applications Switching Application Systems N-Channel MO

 7.1. Size:292K  ruichips
 ru75n08l.pdf pdf_icon

RU75N08R

RU75N08L N-Channel Advanced Power MOSFET Features Pin Description 75V/80A, D RDS (ON) =8m (Typ.)@VGS=10V Ultra Low On-Resistance 100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G S TO252 D Applications High Speed Power Switching G S N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Un

 7.2. Size:285K  ruichips
 ru75n08s.pdf pdf_icon

RU75N08R

RU75N08S N-Channel Advanced Power MOSFET Features Pin Description 75V/80A, RDS (ON) =8m (typ.) @VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested TO-263 175 C Operating Temperature Lead Free and Green Available Applications Switching Application Systems N-Chan

 7.3. Size:443K  ruichips
 ru75n08.pdf pdf_icon

RU75N08R

RU75N08 N-Channel Advanced Power MOSFET MOSFET Features Pin Description 75V/80A, RDS (ON) =8m VGS=10V IDS=40A Ultra Low On-Resistance TO-220 TO-220F Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested TO-263 TO-247 175 C Operating Temperature Lead Free and Green Available Applications Switching Application

MOSTRAR MÁS

Otros transistores... HY3408AB , HY3408APS , HY3408APM , HY5012W , HY5012A , PK5E6BA , PTP03N04N , RMN3N5R0DN , IRFZ44N , WM01P41M , WM01P60M , WM02DH08D , WM02DH08M3 , WM02DH08T , WM02DH50M3 , WM02DN080C , WM02DN085C .

History: SI2306DS-T1 | WMK90R500S | WMN28N60C4 | WSF09N20 | SGM0410 | WSF20N06 | WMLL010N04LG4

 

 

 

 

↑ Back to Top
.