RU75N08R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RU75N08R
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 176 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 450 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de RU75N08R MOSFET
RU75N08R Datasheet (PDF)
ru75n08r.pdf

RU75N08RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 75V/80A,RDS (ON) =8m (Typ.) @VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche RatedTO-220 100% avalanche tested 175C Operating Temperature Lead Free and Green AvailableApplications Switching Application SystemsN-Channel MO
ru75n08l.pdf

RU75N08LN-Channel Advanced Power MOSFETFeatures Pin Description 75V/80A,D RDS (ON) =8m(Typ.)@VGS=10V Ultra Low On-Resistance 100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)GSTO252DApplications High Speed Power SwitchingGSN-Channel MOSFETAbsolute Maximum RatingsSymbol Parameter Rating Un
ru75n08s.pdf

RU75N08S N-Channel Advanced Power MOSFET Features Pin Description 75V/80A, RDS (ON) =8m (typ.) @VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested TO-263 175C Operating Temperature Lead Free and Green Available Applications Switching Application Systems N-Chan
ru75n08.pdf

RU75N08N-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 75V/80A,RDS (ON) =8m VGS=10V IDS=40A Ultra Low On-ResistanceTO-220 TO-220F Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche testedTO-263 TO-247 175C Operating Temperature Lead Free and Green AvailableApplications Switching Application
Otros transistores... HY3408AB , HY3408APS , HY3408APM , HY5012W , HY5012A , PK5E6BA , PTP03N04N , RMN3N5R0DN , IRFZ44N , WM01P41M , WM01P60M , WM02DH08D , WM02DH08M3 , WM02DH08T , WM02DH50M3 , WM02DN080C , WM02DN085C .
History: NTP27N06L | SRT06N022HD | R6530KNZ1 | IRF7101PBF | HY1808APS | FDP053N08B | CJBM3020
History: NTP27N06L | SRT06N022HD | R6530KNZ1 | IRF7101PBF | HY1808APS | FDP053N08B | CJBM3020



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