RU75N08R - Даташиты. Аналоги. Основные параметры
Наименование производителя: RU75N08R
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 176 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 11 ns
Cossⓘ - Выходная емкость: 450 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
Тип корпуса: TO220
Аналог (замена) для RU75N08R
RU75N08R Datasheet (PDF)
ru75n08r.pdf

RU75N08RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 75V/80A,RDS (ON) =8m (Typ.) @VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche RatedTO-220 100% avalanche tested 175C Operating Temperature Lead Free and Green AvailableApplications Switching Application SystemsN-Channel MO
ru75n08l.pdf

RU75N08LN-Channel Advanced Power MOSFETFeatures Pin Description 75V/80A,D RDS (ON) =8m(Typ.)@VGS=10V Ultra Low On-Resistance 100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)GSTO252DApplications High Speed Power SwitchingGSN-Channel MOSFETAbsolute Maximum RatingsSymbol Parameter Rating Un
ru75n08s.pdf

RU75N08S N-Channel Advanced Power MOSFET Features Pin Description 75V/80A, RDS (ON) =8m (typ.) @VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested TO-263 175C Operating Temperature Lead Free and Green Available Applications Switching Application Systems N-Chan
ru75n08.pdf

RU75N08N-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 75V/80A,RDS (ON) =8m VGS=10V IDS=40A Ultra Low On-ResistanceTO-220 TO-220F Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche testedTO-263 TO-247 175C Operating Temperature Lead Free and Green AvailableApplications Switching Application
Другие MOSFET... HY3408AB , HY3408APS , HY3408APM , HY5012W , HY5012A , PK5E6BA , PTP03N04N , RMN3N5R0DN , IRFZ44N , WM01P41M , WM01P60M , WM02DH08D , WM02DH08M3 , WM02DH08T , WM02DH50M3 , WM02DN080C , WM02DN085C .
History: PTA26N65 | SLF5N65S



Список транзисторов
Обновления
MOSFET: AP20G03GD | AP200N15TLG1 | AP200N15MP | AP200N10MP | AP200N04TLG5 | AP200N04NF | AP1N10I | AP18P20P | AP18N03D | AP180N10MP | AP180N04NF | AP180N03D | AP16P02S | AP16P01BF | AP15P10D | AP15P06DF
Popular searches
mje15033 | 2sc945 datasheet | a92 transistor | rfp50n06 | bd140 datasheet | tip2955 | tip35 | 2sk117