WM02DN085C MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

WM02DN085C datasheet

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Document W0803219, Rev D WM02DN085C Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m ) (BR)DSS D DS(on) WM02DN085C uses advanced power trench 8.2 @VGS=4.5V technology that has been especially tailored to 8.5 @VGS=4.0V minimize the on-state resistance This device is 20 8.5 8.8 @VGS=3.7V suitable for un-directional or bidirectional load 9.5 @V

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Document W0803109, Rev C WM02DN08T T Dual N-Channel MOSFET Features V = 20 V, I = 0.75 A DS D R

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WM02DN08D Dual N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS D R

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WM02DN080C Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m ) (BR)DSS D DS(on) WM02DN080C-YW uses advanced power trench 13.0 @VGS=4.5V technology that has been especially tailored to 13.5 @VGS=4.0V minimize the on-state resistance This device is 20 8 14.0 @VGS=3.7V suitable for un-directional or bidirectional load 15.0 @VGS=3.1V switch, facilit

Otros transistores... RU75N08R , WM01P41M , WM01P60M , WM02DH08D , WM02DH08M3 , WM02DH08T , WM02DH50M3 , WM02DN080C , IRFP460 , WM02DN08D , WM02DN08T , WM02DN095C , WM02DN110C , WM02DN48A , WM02DN50M3 , WM02DN560Q , WM02DN60M3 .