WM02DN085C MOSFET. Datasheet pdf. Equivalent

   Type Designator: WM02DN085C
   Marking Code: C085N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 8.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22.1 nC
   trⓘ - Rise Time: 39.7 nS
   Cossⓘ - Output Capacitance: 162 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0109 Ohm
   Package: DFN2030-6L

WM02DN085C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS