WM02DP06D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: WM02DP06D
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 0.66 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 5.7 nS
   Cossⓘ - Capacitancia de salida: 15 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.52 Ohm
   Paquete / Cubierta: SOT363

Búsqueda de reemplazo de MOSFET WM02DP06D

WM02DP06D Datasheet (PDF)

..1. Size:377K way-on
wm02dp06d.pdf

Document: W0803111, Rev: B WM02DP06D D Dual P-Channel MOSFET Features V = -20 V, I = -0.66 A DS DR

9.1. Size:459K way-on
wm02dn08t.pdf

Document: W0803109, Rev: C WM02DN08T T Dual N-Channel MOSFET Features V = 20 V, I = 0.75 A DS DR

9.2. Size:786K way-on
wm02dn560q.pdf

WM02DN560Q Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN560Q uses advanced power trench 4.2 @VGS=4.5V technology that has been especially tailored to 4.3 @VGS=3.9V minimize the on-state resistance This device is 20 56 4.7 @VGS=3.1V suitable for un-directional or bidirectional load switch, 5.0 @VGS=2.5V facilitated

9.3. Size:336K way-on
wm02dn085c.pdf

Document: W0803219, Rev: D WM02DN085C Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN085C uses advanced power trench 8.2 @VGS=4.5V technology that has been especially tailored to 8.5 @VGS=4.0V minimize the on-state resistance This device is 20 8.5 8.8 @VGS=3.7V suitable for un-directional or bidirectional load 9.5 @V

9.4. Size:600K way-on
wm02dh08t.pdf

Document: W0803114, Rev: C WM02DH08T T N+P Dual Channel MOSFET Features N - Channel 6V = 20V, I = 0.75A DS DR

9.5. Size:595K way-on
wm02dn08d.pdf

WM02DN08D Dual N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS DR

9.6. Size:581K way-on
wm02dn70m3.pdf

WM02DN70M3 Dual N-Channel Enhancement MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN70M3 uses advanced power trenchtechnology that has been especially tailored to 11.5 @VGS=10V minimize the on-state resistance This device is 20 7 13 @VGS=4.5V suitable for un-directional or bidirectional load switch, 15 @VGS=2.5V facilitated by its common-drain config

9.7. Size:384K way-on
wm02dn080c.pdf

WM02DN080C Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN080C-YW uses advanced power trench 13.0 @VGS=4.5V technology that has been especially tailored to 13.5 @VGS=4.0V minimize the on-state resistance This device is 20 8 14.0 @VGS=3.7V suitable for un-directional or bidirectional load 15.0 @VGS=3.1V switch, facilit

9.8. Size:688K way-on
wm02dn50m3.pdf

WM02DN50M3 Dual N-Channel Enhancement MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN50M3 uses advanced power trenchtechnology that has been especially tailored to 21 @VGS=4.5V minimize the on-state resistance This device is 20 5 suitable for un-directional or bidirectional load switch, 26 @VGS=2.5V facilitated by its common-drain configuration Feat

9.9. Size:334K way-on
wm02dn110c.pdf

Document: W0803165, Rev: F WM02DN110C Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN110C uses advanced power trench 6.0 @VGS=4.5V technology that has been especially tailored to 6.2 @VGS=4.0V minimize the on-state resistance This device is 20 11 6.5 @VGS=3.7V suitable for un-directional or bidirectional load 7.0 @VG

9.10. Size:454K way-on
wm02dn60m3.pdf

Document: W0803061, Rev: F WM02DN60M3 Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN60M3 uses advanced power trench technology that has been especially tailored to 15.0 @VGS=4.5V minimize the on-state resistance This device is 20 6 16.5 @VGS=3.8V suitable for un-directional or bidirectional load switch, 19.0 @VGS=2.5V

9.11. Size:453K way-on
wm02dn70a.pdf

WM02DN70A Dual N-Channel Enhancement MOSFET Description WM02DN70A uses advanced trench technology that V (V) I (A) R TYP (m) (BR)DSS D DS(on)has been especially tailored to minimize the on-state 11 @VGS=10V resistance. This device is suitable for un-directional 20 7 12 @VGS=4.5V or bidirectional load switch, facilitated by its common-drain configuration. 15 @VGS=2.5V

9.12. Size:370K way-on
wm02dn48a.pdf

Document: W0803087, Rev: C WM02DN48A A Dual N-Channel MOSFET Features V = 20V, I = 4.8A DS DR

9.13. Size:609K way-on
wm02dh08m3.pdf

WM02DH08M3 N+P Dual Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs N-Channel: V = 20V, I = 1.4A DS DR

9.14. Size:467K way-on
wm02dh08d.pdf

WM02DH08D N+P Dual Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs N - Channel V = 20V, I = 0.75A DS DR

9.15. Size:905K way-on
wm02dh50m3.pdf

WM02DH50M31 N+P Dual Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs N-Channel: V = 20V, I = 5A DS DR

9.16. Size:336K way-on
wm02dn095c.pdf

Document: W0803218, Rev: D WM02DN095C Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN095C uses advanced power trench 7.4 @VGS=4.5V technology that has been especially tailored to 7.8 @VGS=4.0V minimize the on-state resistance This device is 20 9.5 8.0 @VGS=3.7V suitable for un-directional or bidirectional load 8.8 @V

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