WM02DP06D MOSFET. Datasheet pdf. Equivalent
Type Designator: WM02DP06D
Marking Code: 06K
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
|Id|ⓘ - Maximum Drain Current: 0.66 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 5.7 nS
Cossⓘ - Output Capacitance: 15 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
Package: SOT363
WM02DP06D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WM02DP06D Datasheet (PDF)
wm02dp06d.pdf
Document: W0803111, Rev: B WM02DP06D D Dual P-Channel MOSFET Features V = -20 V, I = -0.66 A DS DR
wm02dn08t.pdf
Document: W0803109, Rev: C WM02DN08T T Dual N-Channel MOSFET Features V = 20 V, I = 0.75 A DS DR
wm02dn560q.pdf
WM02DN560Q Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN560Q uses advanced power trench 4.2 @VGS=4.5V technology that has been especially tailored to 4.3 @VGS=3.9V minimize the on-state resistance This device is 20 56 4.7 @VGS=3.1V suitable for un-directional or bidirectional load switch, 5.0 @VGS=2.5V facilitated
wm02dn085c.pdf
Document: W0803219, Rev: D WM02DN085C Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN085C uses advanced power trench 8.2 @VGS=4.5V technology that has been especially tailored to 8.5 @VGS=4.0V minimize the on-state resistance This device is 20 8.5 8.8 @VGS=3.7V suitable for un-directional or bidirectional load 9.5 @V
wm02dh08t.pdf
Document: W0803114, Rev: C WM02DH08T T N+P Dual Channel MOSFET Features N - Channel 6V = 20V, I = 0.75A DS DR
wm02dn08d.pdf
WM02DN08D Dual N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS DR
wm02dn70m3.pdf
WM02DN70M3 Dual N-Channel Enhancement MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN70M3 uses advanced power trenchtechnology that has been especially tailored to 11.5 @VGS=10V minimize the on-state resistance This device is 20 7 13 @VGS=4.5V suitable for un-directional or bidirectional load switch, 15 @VGS=2.5V facilitated by its common-drain config
wm02dn080c.pdf
WM02DN080C Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN080C-YW uses advanced power trench 13.0 @VGS=4.5V technology that has been especially tailored to 13.5 @VGS=4.0V minimize the on-state resistance This device is 20 8 14.0 @VGS=3.7V suitable for un-directional or bidirectional load 15.0 @VGS=3.1V switch, facilit
wm02dn50m3.pdf
WM02DN50M3 Dual N-Channel Enhancement MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN50M3 uses advanced power trenchtechnology that has been especially tailored to 21 @VGS=4.5V minimize the on-state resistance This device is 20 5 suitable for un-directional or bidirectional load switch, 26 @VGS=2.5V facilitated by its common-drain configuration Feat
wm02dn110c.pdf
Document: W0803165, Rev: F WM02DN110C Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN110C uses advanced power trench 6.0 @VGS=4.5V technology that has been especially tailored to 6.2 @VGS=4.0V minimize the on-state resistance This device is 20 11 6.5 @VGS=3.7V suitable for un-directional or bidirectional load 7.0 @VG
wm02dn60m3.pdf
Document: W0803061, Rev: F WM02DN60M3 Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN60M3 uses advanced power trench technology that has been especially tailored to 15.0 @VGS=4.5V minimize the on-state resistance This device is 20 6 16.5 @VGS=3.8V suitable for un-directional or bidirectional load switch, 19.0 @VGS=2.5V
wm02dn70a.pdf
WM02DN70A Dual N-Channel Enhancement MOSFET Description WM02DN70A uses advanced trench technology that V (V) I (A) R TYP (m) (BR)DSS D DS(on)has been especially tailored to minimize the on-state 11 @VGS=10V resistance. This device is suitable for un-directional 20 7 12 @VGS=4.5V or bidirectional load switch, facilitated by its common-drain configuration. 15 @VGS=2.5V
wm02dn48a.pdf
Document: W0803087, Rev: C WM02DN48A A Dual N-Channel MOSFET Features V = 20V, I = 4.8A DS DR
wm02dh08m3.pdf
WM02DH08M3 N+P Dual Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs N-Channel: V = 20V, I = 1.4A DS DR
wm02dh08d.pdf
WM02DH08D N+P Dual Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs N - Channel V = 20V, I = 0.75A DS DR
wm02dh50m3.pdf
WM02DH50M31 N+P Dual Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs N-Channel: V = 20V, I = 5A DS DR
wm02dn095c.pdf
Document: W0803218, Rev: D WM02DN095C Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN095C uses advanced power trench 7.4 @VGS=4.5V technology that has been especially tailored to 7.8 @VGS=4.0V minimize the on-state resistance This device is 20 9.5 8.0 @VGS=3.7V suitable for un-directional or bidirectional load 8.8 @V
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: IRFD014PBF | BL19N40-P
History: IRFD014PBF | BL19N40-P
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