WM02DP06D Specs and Replacement
Type Designator: WM02DP06D
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.66 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.7 nS
Cossⓘ -
Output Capacitance: 15 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
Package: SOT363
- MOSFET ⓘ Cross-Reference Search
WM02DP06D datasheet
..1. Size:377K way-on
wm02dp06d.pdf 
Document W0803111, Rev B WM02DP06D D Dual P-Channel MOSFET Features V = -20 V, I = -0.66 A DS D R ... See More ⇒
9.1. Size:459K way-on
wm02dn08t.pdf
Document W0803109, Rev C WM02DN08T T Dual N-Channel MOSFET Features V = 20 V, I = 0.75 A DS D R ... See More ⇒
9.2. Size:786K way-on
wm02dn560q.pdf
WM02DN560Q Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m ) (BR)DSS D DS(on) WM02DN560Q uses advanced power trench 4.2 @VGS=4.5V technology that has been especially tailored to 4.3 @VGS=3.9V minimize the on-state resistance This device is 20 56 4.7 @VGS=3.1V suitable for un-directional or bidirectional load switch, 5.0 @VGS=2.5V facilitated... See More ⇒
9.3. Size:336K way-on
wm02dn085c.pdf
Document W0803219, Rev D WM02DN085C Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m ) (BR)DSS D DS(on) WM02DN085C uses advanced power trench 8.2 @VGS=4.5V technology that has been especially tailored to 8.5 @VGS=4.0V minimize the on-state resistance This device is 20 8.5 8.8 @VGS=3.7V suitable for un-directional or bidirectional load 9.5 @V... See More ⇒
9.4. Size:600K way-on
wm02dh08t.pdf
Document W0803114, Rev C WM02DH08T T N+P Dual Channel MOSFET Features N - Channel 6 V = 20V, I = 0.75A DS D R ... See More ⇒
9.5. Size:595K way-on
wm02dn08d.pdf
WM02DN08D Dual N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS D R ... See More ⇒
9.6. Size:581K way-on
wm02dn70m3.pdf
WM02DN70M3 Dual N-Channel Enhancement MOSFET Description V (V) I (A) R TYP (m ) (BR)DSS D DS(on) WM02DN70M3 uses advanced power trench technology that has been especially tailored to 11.5 @VGS=10V minimize the on-state resistance This device is 20 7 13 @VGS=4.5V suitable for un-directional or bidirectional load switch, 15 @VGS=2.5V facilitated by its common-drain config... See More ⇒
9.7. Size:384K way-on
wm02dn080c.pdf
WM02DN080C Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m ) (BR)DSS D DS(on) WM02DN080C-YW uses advanced power trench 13.0 @VGS=4.5V technology that has been especially tailored to 13.5 @VGS=4.0V minimize the on-state resistance This device is 20 8 14.0 @VGS=3.7V suitable for un-directional or bidirectional load 15.0 @VGS=3.1V switch, facilit... See More ⇒
9.8. Size:688K way-on
wm02dn50m3.pdf
WM02DN50M3 Dual N-Channel Enhancement MOSFET Description V (V) I (A) R TYP (m ) (BR)DSS D DS(on) WM02DN50M3 uses advanced power trench technology that has been especially tailored to 21 @VGS=4.5V minimize the on-state resistance This device is 20 5 suitable for un-directional or bidirectional load switch, 26 @VGS=2.5V facilitated by its common-drain configuration Feat... See More ⇒
9.9. Size:334K way-on
wm02dn110c.pdf
Document W0803165, Rev F WM02DN110C Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m ) (BR)DSS D DS(on) WM02DN110C uses advanced power trench 6.0 @VGS=4.5V technology that has been especially tailored to 6.2 @VGS=4.0V minimize the on-state resistance This device is 20 11 6.5 @VGS=3.7V suitable for un-directional or bidirectional load 7.0 @VG... See More ⇒
9.10. Size:454K way-on
wm02dn60m3.pdf
Document W0803061, Rev F WM02DN60M3 Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m ) (BR)DSS D DS(on) WM02DN60M3 uses advanced power trench technology that has been especially tailored to 15.0 @VGS=4.5V minimize the on-state resistance This device is 20 6 16.5 @VGS=3.8V suitable for un-directional or bidirectional load switch, 19.0 @VGS=2.5V... See More ⇒
9.11. Size:453K way-on
wm02dn70a.pdf
WM02DN70A Dual N-Channel Enhancement MOSFET Description WM02DN70A uses advanced trench technology that V (V) I (A) R TYP (m ) (BR)DSS D DS(on) has been especially tailored to minimize the on-state 11 @VGS=10V resistance. This device is suitable for un-directional 20 7 12 @VGS=4.5V or bidirectional load switch, facilitated by its common-drain configuration. 15 @VGS=2.5V... See More ⇒
9.12. Size:370K way-on
wm02dn48a.pdf
Document W0803087, Rev C WM02DN48A A Dual N-Channel MOSFET Features V = 20V, I = 4.8A DS D R ... See More ⇒
9.13. Size:609K way-on
wm02dh08m3.pdf
WM02DH08M3 N+P Dual Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs N-Channel V = 20V, I = 1.4A DS D R ... See More ⇒
9.14. Size:467K way-on
wm02dh08d.pdf
WM02DH08D N+P Dual Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs N - Channel V = 20V, I = 0.75A DS D R ... See More ⇒
9.16. Size:336K way-on
wm02dn095c.pdf
Document W0803218, Rev D WM02DN095C Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m ) (BR)DSS D DS(on) WM02DN095C uses advanced power trench 7.4 @VGS=4.5V technology that has been especially tailored to 7.8 @VGS=4.0V minimize the on-state resistance This device is 20 9.5 8.0 @VGS=3.7V suitable for un-directional or bidirectional load 8.8 @V... See More ⇒
Detailed specifications: WM02DN095C, WM02DN110C, WM02DN48A, WM02DN50M3, WM02DN560Q, WM02DN60M3, WM02DN70A, WM02DN70M3, 10N60, WM02N08F, WM02N08FB, WM02N08G, WM02N08H, WM02N08L, WM02N20F, WM02N20G, WM02N25M
Keywords - WM02DP06D MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
