WM02P41M MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WM02P41M
Código: 3415
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.2 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 4.1 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
Carga de la puerta (Qg): 9.3 nC
Tiempo de subida (tr): 9 nS
Conductancia de drenaje-sustrato (Cd): 97 pF
Resistencia entre drenaje y fuente RDS(on): 0.045 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET WM02P41M
WM02P41M Datasheet (PDF)
wm02p41m.pdf
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WM02P41M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20 V, I = -4.1A DS DR
wm02p40me.pdf
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WM02P40ME P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -4A DS DR
wm02p40m3.pdf
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Document:W0803119, Rev: B WM02P40M3 M P-Channel MOSFET Features V = -20 V, I = -4.0 A DS DR
wm02p23m.pdf
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WM02P23M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20 V, I = -2.3 A DS DR
wm02p06f.pdf
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WM02P06F P-Channel Enhancement MOSFET Features G Way-on Small Signal MOSFETs D V = -20 V, I = -0.66 A DS DSR
wm02p06l.pdf
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Document: W0803106, Rev: B WM02P06L 1 P-Channel MOSFET Features V = -20 V, I = -0.66 A DS DR
wm02p56m3.pdf
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WM02P56M3 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -5.6A DS DR
wm02p56m2.pdf
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WM02P56M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -5.6A DS DR
wm02p06h.pdf
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WM02P06H P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs D V = -20 V, I = -0.66 A DS DR
wm02p06g.pdf
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WM02P06G P-Channel MOSFET Features Way-on Small Signal MOSFETs V = -20 V, I = -0.66 A DS DR
wm02p60m2.pdf
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Document:W0803226, Rev: B WM02P60M2 2 P-Channel MOSFET Features V = -20 V, I = -6A DS DR
wm02p30me.pdf
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WM02P30ME P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -3A DS DR
wm02p26m.pdf
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WM02P26M P-Channel Enhancement MOSFET Features Way-on Small Single MOSFETs V = -20V, I = -2.6A DS DR
wm02p18f.pdf
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WM02P18F P-Channel Enhancement MOSFET Features G Way-on Small Signal MOSFETs V = -20V, I = -1.8A DDS DR
wm02p160r.pdf
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WM02P160R 20V P-Channel Enhancement Mode Power MOSFET GDPin1DDescriptionSDSDSDDWM02P160R uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDDFeatures DFN2020-6L V = -20V, I = -16A DS DR
wm02p20g.pdf
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WM02P20G P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -2A DS DR
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
![WM02P41M](https://alltransistors.com/images/us.png)
![WM02P41M](https://alltransistors.com/images/es.png)
![WM02P41M](https://alltransistors.com/images/ru.png)
Liste
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