WM02P41M Datasheet and Replacement
Type Designator: WM02P41M
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 4.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 97 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SOT23
- MOSFET Cross-Reference Search
WM02P41M Datasheet (PDF)
wm02p41m.pdf

WM02P41M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20 V, I = -4.1A DS DR
wm02p40me.pdf

WM02P40ME P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -4A DS DR
wm02p40m3.pdf

Document:W0803119, Rev: B WM02P40M3 M P-Channel MOSFET Features V = -20 V, I = -4.0 A DS DR
wm02p23m.pdf

WM02P23M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20 V, I = -2.3 A DS DR
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 2SJ273 | RW1C020UN | IRF441 | AP9926GEO | STD4N62K3 | HUFA75321D3ST | GSM3050S
Keywords - WM02P41M MOSFET datasheet
WM02P41M cross reference
WM02P41M equivalent finder
WM02P41M lookup
WM02P41M substitution
WM02P41M replacement
History: 2SJ273 | RW1C020UN | IRF441 | AP9926GEO | STD4N62K3 | HUFA75321D3ST | GSM3050S



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