FDP7N60NZ Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDP7N60NZ

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 147 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 6.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.25 Ohm

Encapsulados: TO220

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FDP7N60NZ datasheet

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 fdp7n60nz fdpf7n60nz.pdf pdf_icon

FDP7N60NZ

September 2010 UniFET-II TM FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET 600V, 6.5A, 1.25 Features Description RDS(on) = 1.05 ( Typ.)@ VGS = 10V, ID = 3.25A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( Typ. 13nC) DOMS technology. Low Crss ( Typ. 7pF) This advance techn

 ..2. Size:724K  onsemi
 fdp7n60nz fdpf7n60nz.pdf pdf_icon

FDP7N60NZ

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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 fdp7n50 fdpf7n50.pdf pdf_icon

FDP7N60NZ

April 2007 TM UniFET FDP7N50/FDPF7N50 500V N-Channel MOSFET Features Description 7A, 500V, RDS(on) = 0.9 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 12.8 nC) stripe, DMOS technology. Low Crss ( typical 9 pF) This advanced technology has been especially tailo

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 fdp7n50f fdpf7n50f.pdf pdf_icon

FDP7N60NZ

November 2007 UniFETTM FDP7N50F / FDPF7N50F tm N-Channel MOSFET, FRFET 500V, 6A, 1.15 Features Description RDS(on) = 0.95 ( Typ.)@ VGS = 10V, ID = 3A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( Typ. 15nC) DMOS technology. Low Crss ( Typ. 6.3pF) This advance technolo

MOSTRAR MÁS

Otros transistores... FDP5N50NZ, FDP5N60NZ, STM122N, FDP61N20, STM121N, FDP65N06, FDP75N08A, FDP7N50, IRFP450, STM105N, FDP80N06, FDP8440, FDP8441, FDP8443F085, FDP8447L, FDP8860, STM102D