FDP7N60NZ MOSFET Datasheet: N-Ch, 600V, 6.5A. Full specification with pinout and replacement list

FDP7N60NZ Specs and Replacement

   Type Designator: FDP7N60NZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
Package: TO220

FDP7N60NZ substitution

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FDP7N60NZ datasheet

..1. Size:280K fairchild semi
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September 2010 UniFET-II TM FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET 600V, 6.5A, 1.25 Features Description RDS(on) = 1.05 ( Typ.)@ VGS = 10V, ID = 3.25A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( Typ. 13nC) DOMS technology. Low Crss ( Typ. 7pF) This advance techn... See More ⇒

..2. Size:724K onsemi
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

9.1. Size:1019K fairchild semi
fdp7n50 fdpf7n50.pdf pdf_icon

April 2007 TM UniFET FDP7N50/FDPF7N50 500V N-Channel MOSFET Features Description 7A, 500V, RDS(on) = 0.9 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 12.8 nC) stripe, DMOS technology. Low Crss ( typical 9 pF) This advanced technology has been especially tailo... See More ⇒

9.2. Size:543K fairchild semi
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November 2007 UniFETTM FDP7N50F / FDPF7N50F tm N-Channel MOSFET, FRFET 500V, 6A, 1.15 Features Description RDS(on) = 0.95 ( Typ.)@ VGS = 10V, ID = 3A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( Typ. 15nC) DMOS technology. Low Crss ( Typ. 6.3pF) This advance technolo... See More ⇒

Detailed specifications: FDP5N50NZ , FDP5N60NZ , STM122N , FDP61N20 , STM121N , FDP65N06 , FDP75N08A , FDP7N50 , IRFP450 , STM105N , FDP80N06 , FDP8440 , FDP8441 , FDP8443F085 , FDP8447L , FDP8860 , STM102D .