WMB014N06LG4 Todos los transistores

 ..1. Size:641K  way-on
 wmb014n06lg4.pdf

WMB014N06LG4 60V N-Channel Enhancement Mode Power MOSFET Description D D D D D D WMB014N06LG4 uses Wayon's 4th generation power trench MOSFET D D technology that has been especially tailored to minimize the on-state G ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

 5.1. Size:639K  way-on
 wmb014n06hg4.pdf

WMB014N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description D D D D D D WMB014N06HG4 uses Wayon's 4th generation power trench MOSFET D D technology that has been especially tailored to minimize the on-state G ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

 6.1. Size:977K  way-on
 wmb014n04lg4.pdf

WMB014N04LG4 40V N-Channel Enhancement Mode Power MOSFET Description D D D DD D D D WMB014N04LG4 uses Wayon's 4th generation power trench G MOSFET technology that has been especially tailored to minimize the ss s ss G s on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506

 9.1. Size:647K  way-on
 wmb017n03lg2.pdf

WMB017N03LG2 30V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB017N03LG2 uses Wayon's 2nd generation power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This device s ss G s is well suited for high efficiency fast switching applications. PDFN5

 9.2. Size:616K  way-on
 wmb010n04lg4.pdf

WMB010N04LG4 40V N-Channel Enhancement Mode Power MOSFET Description D D D DD D D D WMB010N04LG4 uses Wayon's 4th generation power trench MOSFET G technology that has been especially tailored to minimize the on-state ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506

 9.3. Size:626K  way-on
 wmb018n04lg2.pdf

WMB018N04LG2 40V N-Channel Enhancement Mode Power MOSFET Description D D D DD D WMB018N04LG2 uses Wayon's 2nd generation power trench MOSFET D D technology that has been especially tailored to minimize the on-state G ss s ss resistance and yet maintain superior switching performance. This device G s is well suited for high efficiency fast switching applications. PDFN506