All MOSFET. WMB014N06LG4 Datasheet

 

WMB014N06LG4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMB014N06LG4
   Marking Code: 014N06L4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 183.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 278 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 143.6 nC
   trⓘ - Rise Time: 21.3 nS
   Cossⓘ - Output Capacitance: 2170 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
   Package: PDFN5060-8L

 WMB014N06LG4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMB014N06LG4 Datasheet (PDF)

 ..1. Size:641K  way-on
 wmb014n06lg4.pdf

WMB014N06LG4 WMB014N06LG4

WMB014N06LG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB014N06LG4 uses Wayon's 4th generation power trench MOSFET DDtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

 5.1. Size:639K  way-on
 wmb014n06hg4.pdf

WMB014N06LG4 WMB014N06LG4

WMB014N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB014N06HG4 uses Wayon's 4th generation power trench MOSFET DDtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

 6.1. Size:977K  way-on
 wmb014n04lg4.pdf

WMB014N06LG4 WMB014N06LG4

WMB014N04LG4 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB014N04LG4 uses Wayon's 4th generation power trench GMOSFET technology that has been especially tailored to minimize the sssssGson-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506

 9.1. Size:647K  way-on
 wmb017n03lg2.pdf

WMB014N06LG4 WMB014N06LG4

WMB017N03LG2 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB017N03LG2 uses Wayon's 2nd generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5

 9.2. Size:616K  way-on
 wmb010n04lg4.pdf

WMB014N06LG4 WMB014N06LG4

WMB010N04LG4 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB010N04LG4 uses Wayon's 4th generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506

 9.3. Size:626K  way-on
 wmb018n04lg2.pdf

WMB014N06LG4 WMB014N06LG4

WMB018N04LG2 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB018N04LG2 uses Wayon's 2nd generation power trench MOSFET D Dtechnology that has been especially tailored to minimize the on-state Gsssssresistance and yet maintain superior switching performance. This device Gsis well suited for high efficiency fast switching applications. PDFN506

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: WFF2N65

 

 
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