All MOSFET. WMB014N06LG4 Datasheet

 

WMB014N06LG4 Datasheet and Replacement


   Type Designator: WMB014N06LG4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 183.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 278 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21.3 nS
   Cossⓘ - Output Capacitance: 2170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
   Package: PDFN5060-8L
 

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WMB014N06LG4 Datasheet (PDF)

 ..1. Size:641K  way-on
 wmb014n06lg4.pdf pdf_icon

WMB014N06LG4

WMB014N06LG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB014N06LG4 uses Wayon's 4th generation power trench MOSFET DDtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

 5.1. Size:639K  way-on
 wmb014n06hg4.pdf pdf_icon

WMB014N06LG4

WMB014N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB014N06HG4 uses Wayon's 4th generation power trench MOSFET DDtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

 6.1. Size:977K  way-on
 wmb014n04lg4.pdf pdf_icon

WMB014N06LG4

WMB014N04LG4 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB014N04LG4 uses Wayon's 4th generation power trench GMOSFET technology that has been especially tailored to minimize the sssssGson-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506

 9.1. Size:647K  way-on
 wmb017n03lg2.pdf pdf_icon

WMB014N06LG4

WMB017N03LG2 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB017N03LG2 uses Wayon's 2nd generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5

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Datasheet: WM6C61042A , WMAA4N65D1B , WMK4N65D1B , WML4N65D1B , WMO4N65D1B , WMB010N04LG4 , WMB014N04LG4 , WMB014N06HG4 , IRF3710 , WMB017N03LG2 , WMB018N04LG2 , WMB020N03LG4 , WMB020N06HG4 , WMB023N03LG2 , WMB025N06HG4 , WMB025N06LG4 , WMB027N08HG4 .

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