WMB017N03LG2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMB017N03LG2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6.2 nS
Cossⓘ - Capacitancia de salida: 1800 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0017 Ohm
Encapsulados: PDFN5060-8L
Búsqueda de reemplazo de WMB017N03LG2 MOSFET
- Selecciónⓘ de transistores por parámetros
WMB017N03LG2 datasheet
wmb017n03lg2.pdf
WMB017N03LG2 30V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB017N03LG2 uses Wayon's 2nd generation power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This device s ss G s is well suited for high efficiency fast switching applications. PDFN5
wmb014n04lg4.pdf
WMB014N04LG4 40V N-Channel Enhancement Mode Power MOSFET Description D D D DD D D D WMB014N04LG4 uses Wayon's 4th generation power trench G MOSFET technology that has been especially tailored to minimize the ss s ss G s on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506
wmb010n04lg4.pdf
WMB010N04LG4 40V N-Channel Enhancement Mode Power MOSFET Description D D D DD D D D WMB010N04LG4 uses Wayon's 4th generation power trench MOSFET G technology that has been especially tailored to minimize the on-state ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506
wmb014n06hg4.pdf
WMB014N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description D D D D D D WMB014N06HG4 uses Wayon's 4th generation power trench MOSFET D D technology that has been especially tailored to minimize the on-state G ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50
Otros transistores... WMAA4N65D1B , WMK4N65D1B , WML4N65D1B , WMO4N65D1B , WMB010N04LG4 , WMB014N04LG4 , WMB014N06HG4 , WMB014N06LG4 , IRFB4227 , WMB018N04LG2 , WMB020N03LG4 , WMB020N06HG4 , WMB023N03LG2 , WMB025N06HG4 , WMB025N06LG4 , WMB027N08HG4 , WMB02DN10T1 .
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