WMB017N03LG2 Todos los transistores

 

WMB017N03LG2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMB017N03LG2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6.2 nS
   Cossⓘ - Capacitancia de salida: 1800 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0017 Ohm
   Paquete / Cubierta: PDFN5060-8L
 

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WMB017N03LG2 Datasheet (PDF)

 ..1. Size:647K  way-on
 wmb017n03lg2.pdf pdf_icon

WMB017N03LG2

WMB017N03LG2 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB017N03LG2 uses Wayon's 2nd generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5

 9.1. Size:977K  way-on
 wmb014n04lg4.pdf pdf_icon

WMB017N03LG2

WMB014N04LG4 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB014N04LG4 uses Wayon's 4th generation power trench GMOSFET technology that has been especially tailored to minimize the sssssGson-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506

 9.2. Size:616K  way-on
 wmb010n04lg4.pdf pdf_icon

WMB017N03LG2

WMB010N04LG4 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB010N04LG4 uses Wayon's 4th generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506

 9.3. Size:639K  way-on
 wmb014n06hg4.pdf pdf_icon

WMB017N03LG2

WMB014N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB014N06HG4 uses Wayon's 4th generation power trench MOSFET DDtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

MOSTRAR MÁS

Otros transistores... WMAA4N65D1B , WMK4N65D1B , WML4N65D1B , WMO4N65D1B , WMB010N04LG4 , WMB014N04LG4 , WMB014N06HG4 , WMB014N06LG4 , IRF3710 , WMB018N04LG2 , WMB020N03LG4 , WMB020N06HG4 , WMB023N03LG2 , WMB025N06HG4 , WMB025N06LG4 , WMB027N08HG4 , WMB02DN10T1 .

History: AP2323AGN | AP4800GM | FDMS9620S | AP15P10GP-HF | JMTLA3134K | IXFQ50N50P3 | SWP7N60D

 

 
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