WMB017N03LG2 - аналоги и даташиты транзистора

 

WMB017N03LG2 - Даташиты. Аналоги. Основные параметры


   Наименование производителя: WMB017N03LG2
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 30.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 6.2 ns
   Cossⓘ - Выходная емкость: 1800 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0017 Ohm
   Тип корпуса: PDFN5060-8L
 

 Аналог (замена) для WMB017N03LG2

   - подбор ⓘ MOSFET транзистора по параметрам

 

WMB017N03LG2 Datasheet (PDF)

 ..1. Size:647K  way-on
 wmb017n03lg2.pdf pdf_icon

WMB017N03LG2

WMB017N03LG2 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB017N03LG2 uses Wayon's 2nd generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5

 9.1. Size:977K  way-on
 wmb014n04lg4.pdf pdf_icon

WMB017N03LG2

WMB014N04LG4 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB014N04LG4 uses Wayon's 4th generation power trench GMOSFET technology that has been especially tailored to minimize the sssssGson-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506

 9.2. Size:616K  way-on
 wmb010n04lg4.pdf pdf_icon

WMB017N03LG2

WMB010N04LG4 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB010N04LG4 uses Wayon's 4th generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506

 9.3. Size:639K  way-on
 wmb014n06hg4.pdf pdf_icon

WMB017N03LG2

WMB014N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB014N06HG4 uses Wayon's 4th generation power trench MOSFET DDtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

ПОКАЗАТЬ ЕЩЁ

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