WMB018N04LG2 Todos los transistores

 

WMB018N04LG2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMB018N04LG2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 113 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 130 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8.8 nS
   Cossⓘ - Capacitancia de salida: 1050 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0018 Ohm
   Paquete / Cubierta: PDFN5060-8L
 

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WMB018N04LG2 Datasheet (PDF)

 ..1. Size:626K  way-on
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WMB018N04LG2

WMB018N04LG2 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB018N04LG2 uses Wayon's 2nd generation power trench MOSFET D Dtechnology that has been especially tailored to minimize the on-state Gsssssresistance and yet maintain superior switching performance. This device Gsis well suited for high efficiency fast switching applications. PDFN506

 9.1. Size:647K  way-on
 wmb017n03lg2.pdf pdf_icon

WMB018N04LG2

WMB017N03LG2 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB017N03LG2 uses Wayon's 2nd generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5

 9.2. Size:977K  way-on
 wmb014n04lg4.pdf pdf_icon

WMB018N04LG2

WMB014N04LG4 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB014N04LG4 uses Wayon's 4th generation power trench GMOSFET technology that has been especially tailored to minimize the sssssGson-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506

 9.3. Size:616K  way-on
 wmb010n04lg4.pdf pdf_icon

WMB018N04LG2

WMB010N04LG4 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB010N04LG4 uses Wayon's 4th generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506

MOSTRAR MÁS

Otros transistores... WMK4N65D1B , WML4N65D1B , WMO4N65D1B , WMB010N04LG4 , WMB014N04LG4 , WMB014N06HG4 , WMB014N06LG4 , WMB017N03LG2 , IRFB4115 , WMB020N03LG4 , WMB020N06HG4 , WMB023N03LG2 , WMB025N06HG4 , WMB025N06LG4 , WMB027N08HG4 , WMB02DN10T1 , WMB032N04LG2 .

History: SM3381EHQG | RU60D5H | SM9926DSK | SM2605PSC | STF10N95K5 | AP9563GJ

 

 
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