WMB018N04LG2 - описание и поиск аналогов

 

WMB018N04LG2. Аналоги и основные параметры

Наименование производителя: WMB018N04LG2

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 113 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 130 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 8.8 ns

Cossⓘ - Выходная емкость: 1050 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0018 Ohm

Тип корпуса: PDFN5060-8L

Аналог (замена) для WMB018N04LG2

- подборⓘ MOSFET транзистора по параметрам

 

WMB018N04LG2 даташит

 ..1. Size:626K  way-on
 wmb018n04lg2.pdf pdf_icon

WMB018N04LG2

WMB018N04LG2 40V N-Channel Enhancement Mode Power MOSFET Description D D D DD D WMB018N04LG2 uses Wayon's 2nd generation power trench MOSFET D D technology that has been especially tailored to minimize the on-state G ss s ss resistance and yet maintain superior switching performance. This device G s is well suited for high efficiency fast switching applications. PDFN506

 9.1. Size:647K  way-on
 wmb017n03lg2.pdf pdf_icon

WMB018N04LG2

WMB017N03LG2 30V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB017N03LG2 uses Wayon's 2nd generation power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This device s ss G s is well suited for high efficiency fast switching applications. PDFN5

 9.2. Size:977K  way-on
 wmb014n04lg4.pdf pdf_icon

WMB018N04LG2

WMB014N04LG4 40V N-Channel Enhancement Mode Power MOSFET Description D D D DD D D D WMB014N04LG4 uses Wayon's 4th generation power trench G MOSFET technology that has been especially tailored to minimize the ss s ss G s on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506

 9.3. Size:616K  way-on
 wmb010n04lg4.pdf pdf_icon

WMB018N04LG2

WMB010N04LG4 40V N-Channel Enhancement Mode Power MOSFET Description D D D DD D D D WMB010N04LG4 uses Wayon's 4th generation power trench MOSFET G technology that has been especially tailored to minimize the on-state ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WMK4N65D1B , WML4N65D1B , WMO4N65D1B , WMB010N04LG4 , WMB014N04LG4 , WMB014N06HG4 , WMB014N06LG4 , WMB017N03LG2 , IRF3710 , WMB020N03LG4 , WMB020N06HG4 , WMB023N03LG2 , WMB025N06HG4 , WMB025N06LG4 , WMB027N08HG4 , WMB02DN10T1 , WMB032N04LG2 .

History: WMB025N06HG4

 

 

 

 

↑ Back to Top
.