WMB032N04LG2 Todos los transistores

 

WMB032N04LG2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMB032N04LG2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 44.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4.8 nS
   Cossⓘ - Capacitancia de salida: 960 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
   Paquete / Cubierta: PDFN5060-8L
 

 Búsqueda de reemplazo de WMB032N04LG2 MOSFET

   - Selección ⓘ de transistores por parámetros

 

WMB032N04LG2 Datasheet (PDF)

 ..1. Size:646K  way-on
 wmb032n04lg2.pdf pdf_icon

WMB032N04LG2

WMB032N04LG2 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB032N04LG2 uses Wayon's 2nd generation power trench MOSFET D Dtechnology that has been especially tailored to minimize the on-state Gsssssresistance and yet maintain superior switching performance. This device Gsis well suited for high efficiency fast switching applications. PDFN506

 9.1. Size:637K  way-on
 wmb037n10hgs.pdf pdf_icon

WMB032N04LG2

WMB037N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB037N10HGS uses Wayon's advanced power trench MOSFET Gsstechnology that has been especially tailored to minimize the on-state sssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5060-8

 9.2. Size:649K  way-on
 wmb034n06hg4.pdf pdf_icon

WMB032N04LG2

WMB034N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB034N06HG4 uses Wayon's 4th generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5

 9.3. Size:988K  way-on
 wmb034n06lg4.pdf pdf_icon

WMB032N04LG2

WMB034N06LG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB034N06LG4 uses Wayon's 4th generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5

MOSTRAR MÁS

Otros transistores... WMB018N04LG2 , WMB020N03LG4 , WMB020N06HG4 , WMB023N03LG2 , WMB025N06HG4 , WMB025N06LG4 , WMB027N08HG4 , WMB02DN10T1 , AON7408 , WMB034N06HG4 , WMB034N06LG4 , WMB037N10HGS , WMB03DN06T1 , WMB040N03LG2 , WMB040N08HGS , WMB042DN03LG2 , WMB043N10HGS .

History: SRM6N60D1 | 2SK1850 | IRF7455TR | PJM2302NSA-S | HYG009N04LS1C2 | EMB07N03HR | SSR1N60BTM

 

 
Back to Top

 


 
.