WMB032N04LG2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMB032N04LG2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 44.6 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 90 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4.8 nS
Cossⓘ - Capacitancia de salida: 960 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
Encapsulados: PDFN5060-8L
Búsqueda de reemplazo de WMB032N04LG2 MOSFET
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WMB032N04LG2 datasheet
wmb032n04lg2.pdf
WMB032N04LG2 40V N-Channel Enhancement Mode Power MOSFET Description D D D DD D WMB032N04LG2 uses Wayon's 2nd generation power trench MOSFET D D technology that has been especially tailored to minimize the on-state G ss s ss resistance and yet maintain superior switching performance. This device G s is well suited for high efficiency fast switching applications. PDFN506
wmb037n10hgs.pdf
WMB037N10HGS 100V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMB037N10HGS uses Wayon's advanced power trench MOSFET G ss technology that has been especially tailored to minimize the on-state s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5060-8
wmb034n06hg4.pdf
WMB034N06HG4 60V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB034N06HG4 uses Wayon's 4th generation power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This device s ss G s is well suited for high efficiency fast switching applications. PDFN5
wmb034n06lg4.pdf
WMB034N06LG4 60V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB034N06LG4 uses Wayon's 4th generation power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This device s ss G s is well suited for high efficiency fast switching applications. PDFN5
Otros transistores... WMB018N04LG2, WMB020N03LG4, WMB020N06HG4, WMB023N03LG2, WMB025N06HG4, WMB025N06LG4, WMB027N08HG4, WMB02DN10T1, IRFP250N, WMB034N06HG4, WMB034N06LG4, WMB037N10HGS, WMB03DN06T1, WMB040N03LG2, WMB040N08HGS, WMB042DN03LG2, WMB043N10HGS
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