WMB032N04LG2
MOSFET. Datasheet pdf. Equivalent
Type Designator: WMB032N04LG2
Marking Code: B032N04L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 44.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4
V
|Id|ⓘ - Maximum Drain Current: 90
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 17.5
nC
trⓘ - Rise Time: 4.8
nS
Cossⓘ -
Output Capacitance: 960
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0032
Ohm
Package:
PDFN5060-8L
WMB032N04LG2
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMB032N04LG2
Datasheet (PDF)
..1. Size:646K way-on
wmb032n04lg2.pdf
WMB032N04LG2 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB032N04LG2 uses Wayon's 2nd generation power trench MOSFET D Dtechnology that has been especially tailored to minimize the on-state Gsssssresistance and yet maintain superior switching performance. This device Gsis well suited for high efficiency fast switching applications. PDFN506
9.1. Size:637K way-on
wmb037n10hgs.pdf
WMB037N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB037N10HGS uses Wayon's advanced power trench MOSFET Gsstechnology that has been especially tailored to minimize the on-state sssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5060-8
9.2. Size:649K way-on
wmb034n06hg4.pdf
WMB034N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB034N06HG4 uses Wayon's 4th generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5
9.3. Size:988K way-on
wmb034n06lg4.pdf
WMB034N06LG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB034N06LG4 uses Wayon's 4th generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5
9.4. Size:597K way-on
wmb03dn06t1.pdf
WMB03DN06T1 60V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD1D2D1D2D1 D2D1 D2WMB03DN06T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and S1G1G2yet maintain superior switching performance. S2 S2G1G2S1Features PDFN5060-8L V = 60V, I = 6A DS DR
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