WMB040N08HGS Todos los transistores

 

WMB040N08HGS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMB040N08HGS
   Código: 040N08HS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 122.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 130 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 78.5 nC
   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 1064 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: PDFN5060-8L
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WMB040N08HGS Datasheet (PDF)

 ..1. Size:622K  way-on
 wmb040n08hgs.pdf pdf_icon

WMB040N08HGS

WMB040N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB040N08HGS uses Wayon's advanced power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN5060-8LFe

 6.1. Size:638K  way-on
 wmb040n03lg2.pdf pdf_icon

WMB040N08HGS

WMB040N03LG2 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB040N03LG2 uses Wayon's 2nd generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5

 9.1. Size:976K  way-on
 wmb049n12hg2.pdf pdf_icon

WMB040N08HGS

WMB049N12HG2 120V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB049N12HG2 uses Wayon's 2nd generation power trench DDD DMOSFET technology that has been especially tailored to minimize the Gsson-state resistance and yet maintain superior switching performance. sssGsThis device is well suited for high efficiency fast switching applications. PDFN

 9.2. Size:1057K  way-on
 wmb042dn03lg2.pdf pdf_icon

WMB040N08HGS

WMB042DN03LG2 30V Dual N-Channel Enhancement Mode Power MOSFET DescriptionWMB042DN03LG2 uses Wayon's2nd generation power trench G2S2S2S2S2S2MOSFET technology that has been especially tailored to S2G2minimize the on-state resistance and yet maintain superior G1D1switching performance. This device is well suited for high D1D1D1D1efficiency fast switching a

MOSTRAR MÁS

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: MTB60P06E3

 

 
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