WMB040N08HGS Specs and Replacement
Type Designator: WMB040N08HGS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 122.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 130 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 1064 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: PDFN5060-8L
WMB040N08HGS substitution
WMB040N08HGS Specs
wmb040n08hgs.pdf
WMB040N08HGS 80V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB040N08HGS uses Wayon's advanced power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This s ss G s device is well suited for high efficiency fast switching applications. PDFN5060-8L Fe... See More ⇒
wmb040n03lg2.pdf
WMB040N03LG2 30V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB040N03LG2 uses Wayon's 2nd generation power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This device s ss G s is well suited for high efficiency fast switching applications. PDFN5... See More ⇒
wmb049n12hg2.pdf
WMB049N12HG2 120V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB049N12HG2 uses Wayon's 2nd generation power trench D D D D MOSFET technology that has been especially tailored to minimize the G ss on-state resistance and yet maintain superior switching performance. s ss G s This device is well suited for high efficiency fast switching applications. PDFN... See More ⇒
wmb042dn03lg2.pdf
WMB042DN03LG2 30V Dual N-Channel Enhancement Mode Power MOSFET Description WMB042DN03LG2 uses Wayon's2nd generation power trench G2 S2 S2 S2 S2 S2 MOSFET technology that has been especially tailored to S2 G2 minimize the on-state resistance and yet maintain superior G1 D1 switching performance. This device is well suited for high D1 D1 D1 D1 efficiency fast switching a... See More ⇒
Detailed specifications: WMB027N08HG4 , WMB02DN10T1 , WMB032N04LG2 , WMB034N06HG4 , WMB034N06LG4 , WMB037N10HGS , WMB03DN06T1 , WMB040N03LG2 , 2N7002 , WMB042DN03LG2 , WMB043N10HGS , WMB043N10LGS , WMB048NV6HG4 , WMB048NV6LG4 , WMB049N12HG2 , WMB050N03LG4 , WMB053NV8HGS .
History: SI7326DN
Keywords - WMB040N08HGS MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: SI7326DN
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