WMB048NV6HG4 Todos los transistores

 

WMB048NV6HG4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMB048NV6HG4
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 73.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 65 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 95 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8.2 nS
   Cossⓘ - Capacitancia de salida: 773 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
   Paquete / Cubierta: PDFN5060-8L
 

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WMB048NV6HG4 Datasheet (PDF)

 ..1. Size:445K  way-on
 wmb048nv6hg4.pdf pdf_icon

WMB048NV6HG4

WMB048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionD DD DD DD DWMB048NV6HG4 uses Wayon's 4th generation power trench GsMOSFET technology that has been especially tailored to minimize ss sss Gthe on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast PDFN5060-8Lswitching applicatio

 5.1. Size:643K  way-on
 wmb048nv6lg4.pdf pdf_icon

WMB048NV6HG4

WMB048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionD DD DD DD DWMB048NV6LG4 uses Wayon's 4th generation power trench GsMOSFET technology that has been especially tailored to minimize ss sss Gthe on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast PDFN5060-8Lswitching applicatio

 9.1. Size:976K  way-on
 wmb049n12hg2.pdf pdf_icon

WMB048NV6HG4

WMB049N12HG2 120V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB049N12HG2 uses Wayon's 2nd generation power trench DDD DMOSFET technology that has been especially tailored to minimize the Gsson-state resistance and yet maintain superior switching performance. sssGsThis device is well suited for high efficiency fast switching applications. PDFN

 9.2. Size:1057K  way-on
 wmb042dn03lg2.pdf pdf_icon

WMB048NV6HG4

WMB042DN03LG2 30V Dual N-Channel Enhancement Mode Power MOSFET DescriptionWMB042DN03LG2 uses Wayon's2nd generation power trench G2S2S2S2S2S2MOSFET technology that has been especially tailored to S2G2minimize the on-state resistance and yet maintain superior G1D1switching performance. This device is well suited for high D1D1D1D1efficiency fast switching a

MOSTRAR MÁS

Otros transistores... WMB034N06LG4 , WMB037N10HGS , WMB03DN06T1 , WMB040N03LG2 , WMB040N08HGS , WMB042DN03LG2 , WMB043N10HGS , WMB043N10LGS , IRFP260 , WMB048NV6LG4 , WMB049N12HG2 , WMB050N03LG4 , WMB053NV8HGS , WMB060N08HG2 , WMB060N08LG2 , WMB060N10HGS , WMB060N10LGS .

History: MDF18N50BTH | OSG60R190FT3ZF | G1818

 

 
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