WMB048NV6HG4 - Даташиты. Аналоги. Основные параметры

WMB048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionD DD DD DD DWMB048NV6HG4 uses Wayon's 4th generation power trench GsMOSFET technology that has been especially tailored to minimize ss sss Gthe on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast PDFN5060-8Lswitching applicatio

WMB048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionD DD DD DD DWMB048NV6LG4 uses Wayon's 4th generation power trench GsMOSFET technology that has been especially tailored to minimize ss sss Gthe on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast PDFN5060-8Lswitching applicatio

WMB049N12HG2 120V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB049N12HG2 uses Wayon's 2nd generation power trench DDD DMOSFET technology that has been especially tailored to minimize the Gsson-state resistance and yet maintain superior switching performance. sssGsThis device is well suited for high efficiency fast switching applications. PDFN

WMB042DN03LG2 30V Dual N-Channel Enhancement Mode Power MOSFET DescriptionWMB042DN03LG2 uses Wayon's2nd generation power trench G2S2S2S2S2S2MOSFET technology that has been especially tailored to S2G2minimize the on-state resistance and yet maintain superior G1D1switching performance. This device is well suited for high D1D1D1D1efficiency fast switching a

WMB043N10LGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB043N10LGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5060-8L

WMB040N03LG2 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB040N03LG2 uses Wayon's 2nd generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5

WMB040N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB040N08HGS uses Wayon's advanced power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN5060-8LFe

WMB043N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB043N10HGS uses Wayon's advanced power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5060-8