Справочник MOSFET. WMB048NV6HG4

 

WMB048NV6HG4 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WMB048NV6HG4
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 73.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 65 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 95 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 8.2 ns
   Cossⓘ - Выходная емкость: 773 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.005 Ohm
   Тип корпуса: PDFN5060-8L

 Аналог (замена) для WMB048NV6HG4

 

 

WMB048NV6HG4 Datasheet (PDF)

 ..1. Size:445K  way-on
 wmb048nv6hg4.pdf

WMB048NV6HG4 WMB048NV6HG4

WMB048NV6HG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionD DD DD DD DWMB048NV6HG4 uses Wayon's 4th generation power trench GsMOSFET technology that has been especially tailored to minimize ss sss Gthe on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast PDFN5060-8Lswitching applicatio

 5.1. Size:643K  way-on
 wmb048nv6lg4.pdf

WMB048NV6HG4 WMB048NV6HG4

WMB048NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionD DD DD DD DWMB048NV6LG4 uses Wayon's 4th generation power trench GsMOSFET technology that has been especially tailored to minimize ss sss Gthe on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast PDFN5060-8Lswitching applicatio

 9.1. Size:976K  way-on
 wmb049n12hg2.pdf

WMB048NV6HG4 WMB048NV6HG4

WMB049N12HG2 120V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB049N12HG2 uses Wayon's 2nd generation power trench DDD DMOSFET technology that has been especially tailored to minimize the Gsson-state resistance and yet maintain superior switching performance. sssGsThis device is well suited for high efficiency fast switching applications. PDFN

 9.2. Size:1057K  way-on
 wmb042dn03lg2.pdf

WMB048NV6HG4 WMB048NV6HG4

WMB042DN03LG2 30V Dual N-Channel Enhancement Mode Power MOSFET DescriptionWMB042DN03LG2 uses Wayon's2nd generation power trench G2S2S2S2S2S2MOSFET technology that has been especially tailored to S2G2minimize the on-state resistance and yet maintain superior G1D1switching performance. This device is well suited for high D1D1D1D1efficiency fast switching a

 9.3. Size:1106K  way-on
 wmb043n10lgs.pdf

WMB048NV6HG4 WMB048NV6HG4

WMB043N10LGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB043N10LGS uses Wayon's advanced power trench MOSFET technology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5060-8L

 9.4. Size:638K  way-on
 wmb040n03lg2.pdf

WMB048NV6HG4 WMB048NV6HG4

WMB040N03LG2 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB040N03LG2 uses Wayon's 2nd generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5

 9.5. Size:622K  way-on
 wmb040n08hgs.pdf

WMB048NV6HG4 WMB048NV6HG4

WMB040N08HGS 80V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB040N08HGS uses Wayon's advanced power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN5060-8LFe

 9.6. Size:627K  way-on
 wmb043n10hgs.pdf

WMB048NV6HG4 WMB048NV6HG4

WMB043N10HGS 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB043N10HGS uses Wayon's advanced power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5060-8

Другие MOSFET... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
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