WMB090NV6LG4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMB090NV6LG4
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31.25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 65 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 45 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8.5 nS
Cossⓘ - Capacitancia de salida: 355 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Paquete / Cubierta: PDFN5060-8L
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WMB090NV6LG4 Datasheet (PDF)
wmb090nv6lg4.pdf
WMB090NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB090NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506
wmb090n04lg2.pdf
WMB090N04LG2 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB090N04LG2 uses Wayon's 2nd generation power trench MOSFET D Dtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506
wmb090dn04lg2.pdf
WMB090DN04LG2 40V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD2 D1D2 D1D1D2D1D2WMB090DN04LG2 uses Wayon's 2nd generation power trench S1MOSFET technology that has been especially tailored to minimize the G1G2S2S2G1G2on-state resistance and yet maintain superior switching performance. S1This device is well suited for high efficiency fast swit
wmb090dnv6lg4.pdf
WMB090DNV6LG4 65V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD2 D1D2 D1WMB090DNV6LG4 uses Wayon's 4th generation power trench D1D2D1D2MOSFET technology that has been especially tailored to minimize the S1G1G2on-state resistance and yet maintain superior switching performance. S2 S2G1 G2S1This device is well suited for high efficiency fast switchin
Otros transistores... WMB060N10LGS , WMB072N12HG2 , WMB072N12LG2-S , WMB080N03LG2 , WMB080N10LG2 , WMB090DN04LG2 , WMB090DNV6LG4 , WMB090N04LG2 , IRFP450 , WMB093N15HG4 , WMB098N03LG2 , WMB099N10HGS , WMB099N10LG2 , WMB099N10LGS , WMB100N07TS , WMB100P03TS , WMB108N03T1 .
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