WMB090NV6LG4 Specs and Replacement
Type Designator: WMB090NV6LG4
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 31.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 45 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.5 nS
Cossⓘ - Output Capacitance: 355 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: PDFN5060-8L
WMB090NV6LG4 substitution
- MOSFET ⓘ Cross-Reference Search
WMB090NV6LG4 datasheet
wmb090nv6lg4.pdf
WMB090NV6LG4 65V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMB090NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state G ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506... See More ⇒
wmb090n04lg2.pdf
WMB090N04LG2 40V N-Channel Enhancement Mode Power MOSFET Description D D D D D D WMB090N04LG2 uses Wayon's 2nd generation power trench MOSFET D D technology that has been especially tailored to minimize the on-state G ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506... See More ⇒
wmb090dn04lg2.pdf
WMB090DN04LG2 40V Dual N-Channel Enhancement Mode Power MOSFET Description D2 D1 D2 D1 D1 D2 D1 D2 WMB090DN04LG2 uses Wayon's 2nd generation power trench S1 MOSFET technology that has been especially tailored to minimize the G1 G2 S2 S2 G1 G2 on-state resistance and yet maintain superior switching performance. S1 This device is well suited for high efficiency fast swit... See More ⇒
wmb090dnv6lg4.pdf
WMB090DNV6LG4 65V Dual N-Channel Enhancement Mode Power MOSFET Description D2 D1 D2 D1 WMB090DNV6LG4 uses Wayon's 4th generation power trench D1 D2 D1 D2 MOSFET technology that has been especially tailored to minimize the S1 G1 G2 on-state resistance and yet maintain superior switching performance. S2 S2 G1 G2 S1 This device is well suited for high efficiency fast switchin... See More ⇒
Detailed specifications: WMB060N10LGS, WMB072N12HG2, WMB072N12LG2-S, WMB080N03LG2, WMB080N10LG2, WMB090DN04LG2, WMB090DNV6LG4, WMB090N04LG2, NCEP15T14, WMB093N15HG4, WMB098N03LG2, WMB099N10HGS, WMB099N10LG2, WMB099N10LGS, WMB100N07TS, WMB100P03TS, WMB108N03T1
Keywords - WMB090NV6LG4 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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