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WMB090NV6LG4 Datasheet and Replacement


   Type Designator: WMB090NV6LG4
   Marking Code: 090NV6L4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 21.7 nC
   tr ⓘ - Rise Time: 8.5 nS
   Cossⓘ - Output Capacitance: 355 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: PDFN5060-8L
 

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WMB090NV6LG4 Datasheet (PDF)

 ..1. Size:645K  way-on
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WMB090NV6LG4

WMB090NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB090NV6LG4 uses Wayon's 4th generation power trench MOSFET technology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506

 7.1. Size:476K  way-on
 wmb090n04lg2.pdf pdf_icon

WMB090NV6LG4

WMB090N04LG2 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB090N04LG2 uses Wayon's 2nd generation power trench MOSFET D Dtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506

 8.1. Size:621K  way-on
 wmb090dn04lg2.pdf pdf_icon

WMB090NV6LG4

WMB090DN04LG2 40V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD2 D1D2 D1D1D2D1D2WMB090DN04LG2 uses Wayon's 2nd generation power trench S1MOSFET technology that has been especially tailored to minimize the G1G2S2S2G1G2on-state resistance and yet maintain superior switching performance. S1This device is well suited for high efficiency fast swit

 8.2. Size:985K  way-on
 wmb090dnv6lg4.pdf pdf_icon

WMB090NV6LG4

WMB090DNV6LG4 65V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD2 D1D2 D1WMB090DNV6LG4 uses Wayon's 4th generation power trench D1D2D1D2MOSFET technology that has been especially tailored to minimize the S1G1G2on-state resistance and yet maintain superior switching performance. S2 S2G1 G2S1This device is well suited for high efficiency fast switchin

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Datasheet: WMB060N10LGS , WMB072N12HG2 , WMB072N12LG2-S , WMB080N03LG2 , WMB080N10LG2 , WMB090DN04LG2 , WMB090DNV6LG4 , WMB090N04LG2 , IRFP450 , WMB093N15HG4 , WMB098N03LG2 , WMB099N10HGS , WMB099N10LG2 , WMB099N10LGS , WMB100N07TS , WMB100P03TS , WMB108N03T1 .

History: SVT044R5NDTR

Keywords - WMB090NV6LG4 MOSFET datasheet

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