FDP8870F085 Todos los transistores

July 2010 FDP8870_F085 N-Channel PowerTrench MOSFET 30V, 156A, 4.1m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 4.1m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 4.6m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized fo

e May 2008 FDP8870 tmM N-Channel PowerTrench MOSFET 30V, 156A, 4.1m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 4.1m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 4.6m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized f

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc N-Channel MOSFET Transistor FDP8870 FEATURES With TO-220 packaging Drain Source Voltage- V 30V DSS Static drain-source on-resistance RDS(on) 41m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )