FDP8870F085 PDF and Equivalents Search

 

FDP8870F085 Specs and Replacement

Type Designator: FDP8870F085

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 156 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0041 Ohm

Package: TO220

FDP8870F085 substitution

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FDP8870F085 datasheet

 7.1. Size:337K  fairchild semi
fdp8870 f085.pdf pdf_icon

FDP8870F085

July 2010 FDP8870_F085 N-Channel PowerTrench MOSFET 30V, 156A, 4.1m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 4.1m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 4.6m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized fo... See More ⇒

 7.2. Size:463K  fairchild semi
fdp8870.pdf pdf_icon

FDP8870F085

e May 2008 FDP8870 tmM N-Channel PowerTrench MOSFET 30V, 156A, 4.1m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 4.1m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 4.6m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized f... See More ⇒

 7.3. Size:513K  onsemi
fdp8870.pdf pdf_icon

FDP8870F085

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 7.4. Size:284K  inchange semiconductor
fdp8870.pdf pdf_icon

FDP8870F085

isc N-Channel MOSFET Transistor FDP8870 FEATURES With TO-220 packaging Drain Source Voltage- V 30V DSS Static drain-source on-resistance RDS(on) 41m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒

Detailed specifications: FDP8440, FDP8441, FDP8443F085, FDP8447L, FDP8860, STM102D, FDP8870, STM101N, SI2302, STK900, FDP8874, STK801, FDP8876, STK600, FDP8880, STK400, FDP8896

Keywords - FDP8870F085 MOSFET specs

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