WMB119N12LG4 Todos los transistores

 

WMB119N12LG4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMB119N12LG4
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 96.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 65 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4.2 nS
   Cossⓘ - Capacitancia de salida: 270 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0119 Ohm
   Paquete / Cubierta: PDFN5060-8L
 

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WMB119N12LG4 Datasheet (PDF)

 ..1. Size:640K  way-on
 wmb119n12lg4.pdf pdf_icon

WMB119N12LG4

WMB119N12LG4 120V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB119N12LG4 uses Wayon's 4th generation power trench MOSFET DDtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5

 5.1. Size:636K  way-on
 wmb119n12hg4.pdf pdf_icon

WMB119N12LG4

WMB119N12HG4 120V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB119N12HG4 uses Wayon's 4th generation power trench MOSFET DDtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5

 6.1. Size:519K  way-on
 wmb119n10lg2.pdf pdf_icon

WMB119N12LG4

WMB119N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB119N10LG2 uses Wayon's 2nd generation power trench MOSFET DDDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN50

 9.1. Size:975K  way-on
 wmb115n15lg4.pdf pdf_icon

WMB119N12LG4

WMB115N15LG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB115N15LG4 uses Wayon's 4th generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

MOSTRAR MÁS

Otros transistores... WMB099N10LGS , WMB100N07TS , WMB100P03TS , WMB108N03T1 , WMB115N15HG4 , WMB115N15LG4 , WMB119N10LG2 , WMB119N12HG4 , SKD502T , WMB120P06TS , WMB129N10T2 , WMB140NV6LG4 , WMB150N03TS , WMB175DN10LG4 , WMB175N10HG4 , WMB175N10LG4 , WMB190N15HG4 .

History: STK1820F | FHP2N60A | SI1307DL | WMB129N10T2 | FHP830A | FHS110N8F5A | SVF4N65F

 

 
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