WMB119N12LG4 MOSFET Datasheet: N-Ch, 120V, 65A. Full specification with pinout and replacement list

WMB119N12LG4 Specs and Replacement

Type Designator: WMB119N12LG4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.2 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0119 Ohm

Package: PDFN5060-8L

WMB119N12LG4 substitution

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WMB119N12LG4 datasheet

..1. Size:640K way-on
wmb119n12lg4.pdf pdf_icon

WMB119N12LG4 120V N-Channel Enhancement Mode Power MOSFET Description D D D D D D WMB119N12LG4 uses Wayon's 4th generation power trench MOSFET D D technology that has been especially tailored to minimize the on-state G ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5... See More ⇒

5.1. Size:636K way-on
wmb119n12hg4.pdf pdf_icon

WMB119N12HG4 120V N-Channel Enhancement Mode Power MOSFET Description D D D D D D WMB119N12HG4 uses Wayon's 4th generation power trench MOSFET D D technology that has been especially tailored to minimize the on-state G ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5... See More ⇒

6.1. Size:519K way-on
wmb119n10lg2.pdf pdf_icon

WMB119N10LG2 100V N-Channel Enhancement Mode Power MOSFET Description D D D WMB119N10LG2 uses Wayon's 2nd generation power trench MOSFET DD D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This s ss G s device is well suited for high efficiency fast switching applications. PDFN50... See More ⇒

9.1. Size:975K way-on
wmb115n15lg4.pdf pdf_icon

WMB115N15LG4 150V N-Channel Enhancement Mode Power MOSFET Description D D D DD D D D WMB115N15LG4 uses Wayon's 4th generation power trench MOSFET G technology that has been especially tailored to minimize the on-state ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50... See More ⇒