All MOSFET. WMB119N12LG4 Datasheet

 

WMB119N12LG4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMB119N12LG4
   Marking Code: 119N12L4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 96.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 65 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30 nC
   trⓘ - Rise Time: 4.2 nS
   Cossⓘ - Output Capacitance: 270 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0119 Ohm
   Package: PDFN5060-8L

 WMB119N12LG4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMB119N12LG4 Datasheet (PDF)

 ..1. Size:640K  way-on
 wmb119n12lg4.pdf

WMB119N12LG4 WMB119N12LG4

WMB119N12LG4 120V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB119N12LG4 uses Wayon's 4th generation power trench MOSFET DDtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5

 5.1. Size:636K  way-on
 wmb119n12hg4.pdf

WMB119N12LG4 WMB119N12LG4

WMB119N12HG4 120V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB119N12HG4 uses Wayon's 4th generation power trench MOSFET DDtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN5

 6.1. Size:519K  way-on
 wmb119n10lg2.pdf

WMB119N12LG4 WMB119N12LG4

WMB119N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB119N10LG2 uses Wayon's 2nd generation power trench MOSFET DDDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN50

 9.1. Size:975K  way-on
 wmb115n15lg4.pdf

WMB119N12LG4 WMB119N12LG4

WMB115N15LG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB115N15LG4 uses Wayon's 4th generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

 9.2. Size:443K  way-on
 wmb115n15hg4.pdf

WMB119N12LG4 WMB119N12LG4

WMB115N15HG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB115N15HG4 uses Wayon's 4th generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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