WMB175DN10LG4 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMB175DN10LG4
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 59.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 39 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.6 nS
Cossⓘ - Capacitancia de salida: 142 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0195 Ohm
Encapsulados: PDFN5060-8L
Búsqueda de reemplazo de WMB175DN10LG4 MOSFET
- Selecciónⓘ de transistores por parámetros
WMB175DN10LG4 datasheet
wmb175dn10lg4.pdf
WMB175DN10LG4 100V Dual N-Channel Enhancement Mode Power MOSFET Description D2 D1 D2 D1 WMB175DN10LG4 uses Wayon's 4th generation power trench D1 D2 D1 D2 MOSFET technology that has been especially tailored to minimize the S1 G1 G2 on-state resistance and yet maintain superior switching performance. S2 S2 G1 G2 S1 This device is well suited for high efficiency fast switchi
wmb175n10lg4.pdf
WMB175N10LG4 100V N-Channel Enhancement Mode Power MOSFET Description D D D DD D D D WMB175N10LG4 uses Wayon's 4th generation power trench MOSFET G technology that has been especially tailored to minimize the on-state ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50
wmb175n10hg4.pdf
WMB175N10HG4 100V N-Channel Enhancement Mode Power MOSFET Description D D D DD D D D WMB175N10HG4 uses Wayon's 4th generation power trench MOSFET G technology that has been especially tailored to minimize the on-state ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50
Otros transistores... WMB115N15LG4 , WMB119N10LG2 , WMB119N12HG4 , WMB119N12LG4 , WMB120P06TS , WMB129N10T2 , WMB140NV6LG4 , WMB150N03TS , IRF520 , WMB175N10HG4 , WMB175N10LG4 , WMB190N15HG4 , WMB240P10HG4 , WMB26DN06TS , WMB26N06TS , WMB31430DN , WMB340N20HG2 .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10 | AUN050N08BGL | AUN045N085 | AUN042N055 | AUN036N10 | AUD069N10A | AUD062N08BG | AUD060N08AG | AUD060N055 | AUD056N08BGL | AUB062N08BG
Popular searches
2sa940 | 2sc627 | 2sc680 | 2sd234 | 2sc9014 | a970 transistor | 2sb560 | tip31c transistor equivalent