WMB175DN10LG4 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMB175DN10LG4
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 59.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 39 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.6 nS
Cossⓘ - Capacitancia de salida: 142 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0195 Ohm
Paquete / Cubierta: PDFN5060-8L
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WMB175DN10LG4 Datasheet (PDF)
wmb175dn10lg4.pdf

WMB175DN10LG4 100V Dual N-Channel Enhancement Mode Power MOSFET DescriptionD2 D1D2 D1WMB175DN10LG4 uses Wayon's 4th generation power trench D1D2D1D2MOSFET technology that has been especially tailored to minimize the S1G1G2on-state resistance and yet maintain superior switching performance. S2 S2G1 G2S1This device is well suited for high efficiency fast switchi
wmb175n10lg4.pdf

WMB175N10LG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB175N10LG4 uses Wayon's 4th generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50
wmb175n10hg4.pdf

WMB175N10HG4 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB175N10HG4 uses Wayon's 4th generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50
Otros transistores... WMB115N15LG4 , WMB119N10LG2 , WMB119N12HG4 , WMB119N12LG4 , WMB120P06TS , WMB129N10T2 , WMB140NV6LG4 , WMB150N03TS , CS150N03A8 , WMB175N10HG4 , WMB175N10LG4 , WMB190N15HG4 , WMB240P10HG4 , WMB26DN06TS , WMB26N06TS , WMB31430DN , WMB340N20HG2 .
History: SI4860DY | ME4473-G | CEB03N8 | H8N60P | FR9N20D | NTHL033N65S3HF
History: SI4860DY | ME4473-G | CEB03N8 | H8N60P | FR9N20D | NTHL033N65S3HF



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