WMB90P03TS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMB90P03TS
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 90 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 695 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
Encapsulados: PDFN5060-8L
Búsqueda de reemplazo de WMB90P03TS MOSFET
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WMB90P03TS datasheet
wmb90p03ts.pdf
WMB90P03TS 30V P-Channel Enhancement Mode Power MOSFET Description D D D WMB90P03TS uses advanced power trench technology that has been D D D D D especially tailored to minimize the on-state resistance and yet maintain G superior switching performance. ss s ss G s Features PDFN5060-8L V = -30V, I = -90A DS D R
wmb90p04ts.pdf
WMB90P04TS 40V P-Channel Enhancement Mode Power MOSFET Description D D D WMB90P04TS uses advanced power trench technology that has been D D D D D especially tailored to minimize the on-state resistance and yet maintain G superior switching performance. ss s ss G s Features PDFN5060-8L V = -40V, I = -95A DS D R
wmb90n02ts.pdf
WMB90N02TS 20V N-Channel Enhancement Mode Power MOSFET Description WMB90N02TS uses advanced power trench technology that has been D D D D D D D D especially tailored to minimize the on-state resistance and yet maintain superior switching performance. G ss s ss G s Features PDFN5060-8L V = 20V, I = 90A DS D R
Otros transistores... WMB60P03TA, WMB690N15HG2, WMB70N04T1, WMB70P02TS, WMB80N06TS, WMB80P04TS, WMB81N03T1, WMB90N02TS, AO4468, WMB90P04TS, WMB95P06TS, WMC1N40D1, WMF05N70MM, WMJ020N10HGS, WMJ023N08HGS, WMJ028N10HGS, WMJ10N100D1
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