WMB90P03TS Todos los transistores

 

WMB90P03TS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: WMB90P03TS
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 695 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
   Paquete / Cubierta: PDFN5060-8L
 

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WMB90P03TS Datasheet (PDF)

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WMB90P03TS

WMB90P03TS 30V P-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB90P03TS uses advanced power trench technology that has been DDDD Despecially tailored to minimize the on-state resistance and yet maintain Gsuperior switching performance. sssssGsFeatures PDFN5060-8L V = -30V, I = -90A DS DR

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WMB90P03TS

WMB90P04TS 40V P-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB90P04TS uses advanced power trench technology that has been DDDD Despecially tailored to minimize the on-state resistance and yet maintain Gsuperior switching performance. sssssGsFeatures PDFN5060-8L V = -40V, I = -95A DS DR

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 wmb90n02ts.pdf pdf_icon

WMB90P03TS

WMB90N02TS 20V N-Channel Enhancement Mode Power MOSFET DescriptionWMB90N02TS uses advanced power trench technology that has been D DDDDDD Despecially tailored to minimize the on-state resistance and yet maintain superior switching performance. GsssssGsFeatures PDFN5060-8L V = 20V, I = 90A DS DR

Otros transistores... WMB60P03TA , WMB690N15HG2 , WMB70N04T1 , WMB70P02TS , WMB80N06TS , WMB80P04TS , WMB81N03T1 , WMB90N02TS , IRF730 , WMB90P04TS , WMB95P06TS , WMC1N40D1 , WMF05N70MM , WMJ020N10HGS , WMJ023N08HGS , WMJ028N10HGS , WMJ10N100D1 .

History: WMB81N03T1 | SSW80R380S2 | AOB600A70L | SCT2280KE | SIHLR120 | 2SK2366 | WSP4099

 

 
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