WMB90P03TS Specs and Replacement

Type Designator: WMB90P03TS

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 695 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: PDFN5060-8L

WMB90P03TS substitution

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WMB90P03TS datasheet

 ..1. Size:622K  way-on
 wmb90p03ts.pdf pdf_icon

WMB90P03TS

WMB90P03TS 30V P-Channel Enhancement Mode Power MOSFET Description D D D WMB90P03TS uses advanced power trench technology that has been D D D D D especially tailored to minimize the on-state resistance and yet maintain G superior switching performance. ss s ss G s Features PDFN5060-8L V = -30V, I = -90A DS D R ... See More ⇒

 7.1. Size:989K  way-on
 wmb90p04ts.pdf pdf_icon

WMB90P03TS

WMB90P04TS 40V P-Channel Enhancement Mode Power MOSFET Description D D D WMB90P04TS uses advanced power trench technology that has been D D D D D especially tailored to minimize the on-state resistance and yet maintain G superior switching performance. ss s ss G s Features PDFN5060-8L V = -40V, I = -95A DS D R ... See More ⇒

 9.1. Size:611K  way-on
 wmb90n02ts.pdf pdf_icon

WMB90P03TS

WMB90N02TS 20V N-Channel Enhancement Mode Power MOSFET Description WMB90N02TS uses advanced power trench technology that has been D D D D D D D D especially tailored to minimize the on-state resistance and yet maintain superior switching performance. G ss s ss G s Features PDFN5060-8L V = 20V, I = 90A DS D R ... See More ⇒

Detailed specifications: WMB60P03TA, WMB690N15HG2, WMB70N04T1, WMB70P02TS, WMB80N06TS, WMB80P04TS, WMB81N03T1, WMB90N02TS, AO4468, WMB90P04TS, WMB95P06TS, WMC1N40D1, WMF05N70MM, WMJ020N10HGS, WMJ023N08HGS, WMJ028N10HGS, WMJ10N100D1

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