WMJ10N100D1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMJ10N100D1
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 298 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 71 nS
Cossⓘ - Capacitancia de salida: 248.5 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.3 Ohm
Paquete / Cubierta: TO247
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WMJ10N100D1 Datasheet (PDF)
wmj10n100d1.pdf

WMJ10N100D11000V 10A 1.0 N-ch Power MOSFETDescriptionTO-247WMOSTM D1 is Wayons 1st generation VDMOSTABfamily that is dramatic reduction in on-resistanceand ultra-low gate charge for applicationsrequiring high power density and high efficiency.And it is very robust and RoHS compliant.GDSFeatures V =1050V@TDS jmax Typ.R =1.0@V =10VDS(on) GS 100%
wml10n100c2 wmn10n100c2 wmm10n100c2 wmj10n100c2 wmo10n100c2 wmp10n100c2 wmk10n100c2.pdf

WM 2, WMN10N MM10N100CML10N100C2 N100C2, WM C2 WMJ10N100C2, WM C2, WMP10N MK10N100CMO10N100C N100C2, WM C2 1000V 1.1 S T0 Super Junction Power MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low ga
wml10n105c2 wmn10n105c2 wmm10n105c2 wmj10n105c2 wmo10n105c2 wmp10n105c2 wmk10n105c2.pdf

WM 2, WMN10N MM10N105CML10N105C2 N105C2, WM C2 WMJ10N105C2, WM C2, WMP10N MK10N105CMO10N105C N105C2, WM C2 1050V 1.1 S T0 Super Junction Power MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low ga
wml10n80d1 wmj10n80d1.pdf

WML10N80D1 WMJ10N80D1800V 10A 0.91 N-ch Power MOSFETDescriptionTO-220F TO-247WMOSTM D1 is Wayons 1st generationTABVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is veryrobust and RoHS compliant.GDGSDSFeatures Typ.R =0.91@V =10VDS(on) GS
Otros transistores... WMB90P03TS , WMB90P04TS , WMB95P06TS , WMC1N40D1 , WMF05N70MM , WMJ020N10HGS , WMJ023N08HGS , WMJ028N10HGS , IRF540 , WMJ11N150D1 , WMJ12N120D1 , WMX12N120D1 , WMJ18N90D1 , WMJ20N50D1 , WMK20N50D1 , WML20N50D1 , WMJ220N20HG3 .
History: SIJ400DP | TSP8N60M | 2SK55 | WMB018N04LG2 | CM10N40 | AOL1208 | SUD23N06-31L
History: SIJ400DP | TSP8N60M | 2SK55 | WMB018N04LG2 | CM10N40 | AOL1208 | SUD23N06-31L



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