WMJ10N100D1 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMJ10N100D1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 298 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 86.4 nC
trⓘ - Rise Time: 71 nS
Cossⓘ - Output Capacitance: 248.5 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: TO247
WMJ10N100D1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMJ10N100D1 Datasheet (PDF)
wmj10n100d1.pdf
WMJ10N100D11000V 10A 1.0 N-ch Power MOSFETDescriptionTO-247WMOSTM D1 is Wayons 1st generation VDMOSTABfamily that is dramatic reduction in on-resistanceand ultra-low gate charge for applicationsrequiring high power density and high efficiency.And it is very robust and RoHS compliant.GDSFeatures V =1050V@TDS jmax Typ.R =1.0@V =10VDS(on) GS 100%
wml10n100c2 wmn10n100c2 wmm10n100c2 wmj10n100c2 wmo10n100c2 wmp10n100c2 wmk10n100c2.pdf
WM 2, WMN10N MM10N100CML10N100C2 N100C2, WM C2 WMJ10N100C2, WM C2, WMP10N MK10N100CMO10N100C N100C2, WM C2 1000V 1.1 S T0 Super Junction Power MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low ga
wml10n105c2 wmn10n105c2 wmm10n105c2 wmj10n105c2 wmo10n105c2 wmp10n105c2 wmk10n105c2.pdf
WM 2, WMN10N MM10N105CML10N105C2 N105C2, WM C2 WMJ10N105C2, WM C2, WMP10N MK10N105CMO10N105C N105C2, WM C2 1050V 1.1 S T0 Super Junction Power MOSFETDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G and low ga
wml10n80d1 wmj10n80d1.pdf
WML10N80D1 WMJ10N80D1800V 10A 0.91 N-ch Power MOSFETDescriptionTO-220F TO-247WMOSTM D1 is Wayons 1st generationTABVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is veryrobust and RoHS compliant.GDGSDSFeatures Typ.R =0.91@V =10VDS(on) GS
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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