WMK4N150D1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: WMK4N150D1
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 125 W
Voltaje máximo drenador - fuente |Vds|: 1500 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 4 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 41 nC
Tiempo de subida (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 100 pF
Resistencia entre drenaje y fuente RDS(on): 6.2 Ohm
Paquete / Cubierta: TO220
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WMK4N150D1 Datasheet (PDF)
wmj4n150d1 wmx4n150d1 wmk4n150d1.pdf
WMJ4N150D1 WMX4N150D1 WMK4N150D1 1500V 4A 5.4 N-ch Power MOSFET Description TO-220 TO-3PF TO-247 WMOSTM D1 is Wayons 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. Features G D G G S D D S S
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WMAA4N65D1B WMK4N65D1BWML4N65D1B WMO4N65D1B650V 4A 2.2 N-ch Power MOSFETDescriptionTO-220FTO-220WMOSTM D1 is Wayons 1st generationTABVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerG Gdensity and high efficiency. And it is very D DS Srobust and RoHS compliant.TO-252TO-251-L9.4TABFeatur
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WML4N90D1WMK4N90D1 WMM4N90D1900V 4A 2.9 N-ch Power MOSFETDescriptionTO-220F TO-220 TO-263WMOSTM D1 is Wayons 1st generationTABVDMOS family that is dramatic reduction TABin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is veryDGrobust and RoHS compliant.GDSGSDSFeatures Typ.R =2.9
wmk4n90d1b wml4n90d1b wmm4n90d1b.pdf
WMK4N90D1B WML4N90D1B WMM4N90D1B 900V 4A 1.85 N-ch Power MOSFET Description TO-263 TO-220 TO-220F WMOSTM D1 is Wayons 1st generation VDMOS TAB TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. D And it is very robust and RoHS compliant. G G S D S G D S
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
