Справочник MOSFET. WMK4N150D1

 

WMK4N150D1 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WMK4N150D1
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 100 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 6.2 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для WMK4N150D1

   - подбор ⓘ MOSFET транзистора по параметрам

 

WMK4N150D1 Datasheet (PDF)

 ..1. Size:1527K  way-on
wmj4n150d1 wmx4n150d1 wmk4n150d1.pdfpdf_icon

WMK4N150D1

WMJ4N150D1 WMX4N150D1 WMK4N150D1 1500V 4A 5.4 N-ch Power MOSFET Description TO-220 TO-3PF TO-247 WMOSTM D1 is Wayons 1st generation VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very robust and RoHS compliant. Features G D G G S D D S S

 9.1. Size:1584K  way-on
wmaa4n65d1b wmk4n65d1b wml4n65d1b wmo4n65d1b.pdfpdf_icon

WMK4N150D1

WMAA4N65D1B WMK4N65D1BWML4N65D1B WMO4N65D1B650V 4A 2.2 N-ch Power MOSFETDescriptionTO-220FTO-220WMOSTM D1 is Wayons 1st generationTABVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerG Gdensity and high efficiency. And it is very D DS Srobust and RoHS compliant.TO-252TO-251-L9.4TABFeatur

 9.2. Size:1980K  way-on
wml4n90d1 wmk4n90d1 wmm4n90d1.pdfpdf_icon

WMK4N150D1

WML4N90D1WMK4N90D1 WMM4N90D1900V 4A 2.9 N-ch Power MOSFETDescriptionTO-220F TO-220 TO-263WMOSTM D1 is Wayons 1st generationTABVDMOS family that is dramatic reduction TABin on-resistance and ultra-low gate chargefor applications requiring high powerdensity and high efficiency. And it is veryDGrobust and RoHS compliant.GDSGSDSFeatures Typ.R =2.9

 9.3. Size:1434K  way-on
wmk4n90d1b wml4n90d1b wmm4n90d1b.pdfpdf_icon

WMK4N150D1

WMK4N90D1B WML4N90D1B WMM4N90D1B 900V 4A 1.85 N-ch Power MOSFET Description TO-263 TO-220 TO-220F WMOSTM D1 is Wayons 1st generation VDMOS TAB TAB family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. D And it is very robust and RoHS compliant. G G S D S G D S

Другие MOSFET... WMJ220N20HG3 , WMJ27N80D1 , WMJ3N120D1 , WMO3N120D1 , WMJ40N50D1 , WMPN40N50D1 , WMJ4N150D1 , WMX4N150D1 , IRF9540 , WMJ60N60EM , WMJ69N30DMH , WMJ80N60C4 , WMJ80N60F2 , WMJ80N65C4 , WMJ80N65F2 , WMJ90N60C4 , WMJ90N60F2 .

History: IPI60R280C6 | WM02DH08M3

 

 
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