WMJ80N60F2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: WMJ80N60F2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 410 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 69 nS

Cossⓘ - Capacitancia de salida: 220 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.044 Ohm

Encapsulados: TO247

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WMJ80N60F2 datasheet

 ..1. Size:545K  way-on
 wmj80n60f2.pdf pdf_icon

WMJ80N60F2

WM F2 MJ80N60F 600V 0.037 S 0 Super Junction Power MOSFET Descrip ption WMOSTM F2 is Wa 2nd generation super ayon s n junction MOSFET fam with fa body di F2 M mily ast iode. series pro all benefits of a fast switching ovide b f s SJ-MOSFE while of an extremely fa body ET ffering e ast diode. WM F2 makes especially resonant MOSTM e r S D G switching a s more

 6.1. Size:545K  way-on
 wmj80n60c4.pdf pdf_icon

WMJ80N60F2

WM C4 MJ80N60C 600V 0.033 S 0 Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-re and low ga charge performanc WMOSTM C4 is ate ce. suitable fo applicat which require superior or tions h S D G power density and o

 7.1. Size:544K  way-on
 wmj80n65f2.pdf pdf_icon

WMJ80N60F2

WM F2 MJ80N65F 650V 0.037 S 0 Super Junction Power MOSFET Descrip ption WMOSTM F2 is Wa 2nd generation super ayon s n junction MOSFET fam with fa body di F2 M mily ast iode. series pro all benefits of a fast switching ovide b f s SJ-MOSFE while of an extremely fa body ET ffering e ast diode. WM F2 makes especially resonant MOSTM e r S D G switching a s more

 7.2. Size:545K  way-on
 wmj80n65c4.pdf pdf_icon

WMJ80N60F2

WM C4 MJ80N65C 650V 0.033 S 0 Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-re and low ga charge performanc WMOSTM C4 is ate ce. suitable fo applicat which require superior or tions h S D G power density and o

MOSTRAR MÁS

Otros transistores... WMJ40N50D1, WMPN40N50D1, WMJ4N150D1, WMX4N150D1, WMK4N150D1, WMJ60N60EM, WMJ69N30DMH, WMJ80N60C4, IRFP250N, WMJ80N65C4, WMJ80N65F2, WMJ90N60C4, WMJ90N60F2, WMJ90N65C4, WMJ90N65F2, WMJ99N60C4, WMJ99N60F2