WMJ80N60F2 Specs and Replacement
Type Designator: WMJ80N60F2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 410 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 69 nS
Cossⓘ - Output Capacitance: 220 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
Package: TO247
WMJ80N60F2 substitution
- MOSFET ⓘ Cross-Reference Search
WMJ80N60F2 datasheet
wmj80n60f2.pdf
WM F2 MJ80N60F 600V 0.037 S 0 Super Junction Power MOSFET Descrip ption WMOSTM F2 is Wa 2nd generation super ayon s n junction MOSFET fam with fa body di F2 M mily ast iode. series pro all benefits of a fast switching ovide b f s SJ-MOSFE while of an extremely fa body ET ffering e ast diode. WM F2 makes especially resonant MOSTM e r S D G switching a s more ... See More ⇒
wmj80n60c4.pdf
WM C4 MJ80N60C 600V 0.033 S 0 Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-re and low ga charge performanc WMOSTM C4 is ate ce. suitable fo applicat which require superior or tions h S D G power density and o... See More ⇒
wmj80n65f2.pdf
WM F2 MJ80N65F 650V 0.037 S 0 Super Junction Power MOSFET Descrip ption WMOSTM F2 is Wa 2nd generation super ayon s n junction MOSFET fam with fa body di F2 M mily ast iode. series pro all benefits of a fast switching ovide b f s SJ-MOSFE while of an extremely fa body ET ffering e ast diode. WM F2 makes especially resonant MOSTM e r S D G switching a s more ... See More ⇒
wmj80n65c4.pdf
WM C4 MJ80N65C 650V 0.033 S 0 Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-re and low ga charge performanc WMOSTM C4 is ate ce. suitable fo applicat which require superior or tions h S D G power density and o... See More ⇒
Detailed specifications: WMJ40N50D1, WMPN40N50D1, WMJ4N150D1, WMX4N150D1, WMK4N150D1, WMJ60N60EM, WMJ69N30DMH, WMJ80N60C4, IRFP250N, WMJ80N65C4, WMJ80N65F2, WMJ90N60C4, WMJ90N60F2, WMJ90N65C4, WMJ90N65F2, WMJ99N60C4, WMJ99N60F2
Keywords - WMJ80N60F2 MOSFET specs
WMJ80N60F2 cross reference
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