All MOSFET. WMJ80N60F2 Datasheet

 

WMJ80N60F2 Datasheet and Replacement


   Type Designator: WMJ80N60F2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 410 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 69 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
   Package: TO247
 

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WMJ80N60F2 Datasheet (PDF)

 ..1. Size:545K  way-on
wmj80n60f2.pdf pdf_icon

WMJ80N60F2

WM F2 MJ80N60F 600V 0.037 S0 Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons n junction MOSFET fam with fa body di F2 M mily ast iode. series pro all benefits of a fast switching ovide b f sSJ-MOSFE while of an extremely fa body ET ffering e ast diode. WM F2 makes especially resonant MOSTM e rS D G switching a s more

 6.1. Size:545K  way-on
wmj80n60c4.pdf pdf_icon

WMJ80N60F2

WM C4 MJ80N60C 600V 0.033 S0 Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-reand low ga charge performanc WMOSTM C4 is ate ce. suitable fo applicat which require superior or tions h S D G power density and o

 7.1. Size:544K  way-on
wmj80n65f2.pdf pdf_icon

WMJ80N60F2

WM F2 MJ80N65F 650V 0.037 S0 Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons n junction MOSFET fam with fa body di F2 M mily ast iode. series pro all benefits of a fast switching ovide b f sSJ-MOSFE while of an extremely fa body ET ffering e ast diode. WM F2 makes especially resonant MOSTM e rS D G switching a s more

 7.2. Size:545K  way-on
wmj80n65c4.pdf pdf_icon

WMJ80N60F2

WM C4 MJ80N65C 650V 0.033 S0 Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-reand low ga charge performanc WMOSTM C4 is ate ce. suitable fo applicat which require superior or tions h S D G power density and o

Datasheet: WMJ40N50D1 , WMPN40N50D1 , WMJ4N150D1 , WMX4N150D1 , WMK4N150D1 , WMJ60N60EM , WMJ69N30DMH , WMJ80N60C4 , AON7408 , WMJ80N65C4 , WMJ80N65F2 , WMJ90N60C4 , WMJ90N60F2 , WMJ90N65C4 , WMJ90N65F2 , WMJ99N60C4 , WMJ99N60F2 .

History: CRST049N08N | STP16NF06LFP

Keywords - WMJ80N60F2 MOSFET datasheet

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